国家/地区 中国（24）
IPC部 C（24）
IPC大类 C23（24）
IPC小类 C23C（24） H01L（6） C01B（4）
C09D（3） C22C（3） C25D（2）
C30B（2）
IPC C23C014/58（24）
发明人 CAO Y（2） DU X（2） HAO M（2）
LI C（2） LI J（2） LIU M（2）
WANG X（2） WU H（2） ZHANG C（2）
ZHANG Y（2）
公开年 2021（12） 2022（10） 2023（2）
申请年 2021（24）
专利权人 DONGGUAN SAE.（2） LIAONING FEN.（2） UNIV XIAN JI.（2）

Preparing a metal wafer substrate involves forming metal thin film on the sapphire substrate by magnetron sputtering, and annealing under mixed atmosphere of hydrogen and argon.

PENG H, YANG Y, CAO Y, TANG J, YAN R, DU Y

Plating film on surface of plastic work piece comprises etching plastic product, placing plastic work piece with rough surface in vacuum coating machine, using metal alloy, and coating varnish film layer on plastic work piece with surface deposited with metal film layer.

ZHI X

Preparing antistatic clamp involves placing plastic fixture in vacuum coating machine, using metal alloy as target, performing magnetron sputtering on plastic fixture to obtain alloy coating layer on plastic fixture, where metal alloy includes aluminum, chromium, copper, silver, nickel, and titanium.

JIN Z

Diode for semiconductors, has heterojunction device with vertical structure, which is indium tin oxide substrate, gallium oxide film, graphene film and aluminum electrode layer, from bottom to top.

XIANG J, JIA M, HAN T, TANG L

Low temperature sputtered graphene transparent electrode thin film used in solar cell comprises soda-lime glass substrate plated with molybdenum thin film, photovoltaic copper-zinc-tin-selenium film layer, and p-n junction thin film.

MA J

Growing of nitride on diamond for e.g. consumer electronics, involves preparing group of diamond single crystal substrates, group(s) of diamond polycrystalline polishing substrates and material of gallium nitride/graphene/diamond.

LIANG Z, WANG Q, WANG X

Method for manufacturing energy-saving door and window used for a building, involves cleaning and drying the glass body, coating the heat-insulating paint on the glass body to form a heat-insulating coating, adhering the light-adjusting film and hot-pressing onto the heat-insulating coating.

ZHANG C, LIU H

Preparing graphene by relatively closed area solid-phase process, comprises successively or simultaneously depositing carbon source layer and catalytic metal layer on surface of clean substrate to obtain graphene preparation precursor, and heat annealing in oxygen-free or low-oxygen environment.

DUAN J, DENG L, LV T, WU H, ZHANG W, XIONG W

Winding type device for preparing graphene composite film, has pattern generating roller that partially removes wet film layer which is not formed on flexible base film through negative pressure absorption.

LI C, DU X, HAO M

Preparation of graphene/metal film composite material for cycloaddition reaction, involves using electron beam evaporation method, preparing metal film on silicon plate, utilizing polymethyl methacrylate transfer method, and transferring graphene to surface of metal film.

ZHENG X, LIU W, YU X, YU Y, LIU J, YANG X