国家/地区 中国（7）
IPC部 C（7）
IPC大类 C23（7）
IPC小类 C23C（7）
IPC C23C016/02（7）
发明人 LIU Z（2）
公开年 2021（2） 2022（2）
申请年 2021（2） 
专利权人

Growing single-layer graphene useful in semiconductor device involves fixing copper foil on cathode, placing in acidic electrolyte, applying voltage between working and counter electrodes, placing copper foil and growing single layer graphene on both sides of copper foil by chemical vapor deposition.

SHEN H, MA Y

Growing large size graphene crystal domain at low temperature by plasma enhanced chemical vapor deposition method, comprises putting high-purity copper foil in faraday cage, and placing cage in plasma-enhanced chemical vapor deposition reaction chamber.

ZHEN Z, ZHANG R, XU Z, HE L, LI N

Preparing copper/graphene/copper composite material useful in national power system and integrated circuit, comprises e.g. cleaning copper foil, using direct current power supply to polish surface of copper foil, reacting and depositing.

WU L

Electrochemical polishing solution useful for pre-treatment of copper foil surface, comprises phosphoric acid, sulfuric acid or/and hydrochloric acid, viscosity regulator and de-ionized water.

YU Y, SUN F, FENG A, CHEN B, MI L, SONG L

Pretreating graphene growth substrate comprises using copper foil or copper-nickel alloy foil as the base, polishing base, placing in tube furnace for annealing, taking annealed substrate of tube furnace, and polishing.

HAO Y, NIU W

Method for preparing flat graphene for preparation of corrosion resistant material, involves orienting copper foil, polishing and annealing copper foil, growing graphene and stopping growth of graphene to obtain flat graphene.

PENG H, DENG B, LIU Z

Growing graphene thin film on copper foil involves subjecting copper foil to plasma cleaning, de-contaminating copper foil, removing oxidation layer from copper foil, electrochemically polishing copper foil.

JIN H, LIU Z, QI X, PENG P, YANG H, ZHANG Z, ZHANG W, ZHANG X, DENG K