国家/地区 中国（24）
IPC部 C（24） B（6）
IPC大类 C23（24）
IPC小类 C23C（24）
IPC C23C016/26（24）
发明人 WANG Z（24）
公开年 2012（4） 2015（4） 2016（3） 2017（3） 2018（3） 2021（3） 2022（2）
申请年 2015（5）  2017（5）  2011（3）  2022（3）  2016（2）  2021（2） 
专利权人 CHONGQING GR.（4） SHANGHAI INS.（3） CHANGZHOU 2D.（2） HARBIN INST .（2）
UNIV ZHEJIAN.（2） WUXI DILIUYU.（2） XIAMEN GCVD .（2）

Preparing gallium nitride nanowire/graphene composite material useful in sterilizing device, comprises providing substrate, forming layer of gold film on positive and negative surfaces of substrate, growing gallium nitride nanowire on substrate covered with gold film, and depositing graphene film.

LI J, FU Y, DAI Y, LIN C, WANG Z, LIN L, YANG Y, HU Y, XU Z, FU Z

Preparing graphene thermal conductive film comprises e.g. ultrasonically cleaning nickel foil with acetone and pure water, drying, pressing high temperature resistant frame horizontally on nickel foil, corroding nickel foil with dilute hydrochloric acid, cleaning film with pure water, and drying.

GUO B, JIN H, WANG Z

Graphite crucible useful for manufacturing integrated circuit, comprises crucible body and crucible cover, supporting platform used for horizontally placing crucible cover, groove arranged between supporting platform and inner wall and crucible cover comprises air inlet hole and air outlet hole.

CHANG B, DENG K, JIN H, WANG Z

Preparing metal/graphene/single atom composite catalytic material involves reparing pure foam metal material, preparing graphene on the surface of pure foam metal material by chemical vapour deposition method, and vacuumizing.

CHENG H, ZHONG S, MO H, ZENG Y, WANG Z, WANG Y, LIU Y, HU M, WU H, CAO Y

Method for high-quality, rapid, large-area preparation of vertical graphene films, comprises e.g. passing rolled substrate through reaction chamber, turning on plasma, winding of rotating shaft to form vertical graphene and reacting.

WANG Z, LI Y, LIU M, LIU J

Controllable growing of two-dimensional semiconductor film by dissolving excess metal precursor in supercritical carbon dioxide to reach saturation state, introducing supercritical carbon dioxide into nuclear reaction area, and growing film.

XU Q, WANG Q, YIN J, LIU B, WANG Z

Graphene growth method used for increasing the nucleation density of graphene, involves providing germanium substrate, performing ion implantation on germanium substrate, annealing, providing carbon source and growing.

DI Z, MA J, ZHANG M, WANG G, JIA P, WANG Z, WANG X

Preparation of large-area double-layer graphene film on insulating substrate, involves placing composite substrate containing copper tube into reactor, introducing gas mixture of argon and hydrogen, heating, and adding gaseous carbon source.

SUN H, GAO Y, ZHANG C, WANG Z, WANG Q, XU J, WANG J

Vertical graphene roll-to-roll continuous growing device comprises vacuum chamber, high temperature process chamber, vacuum chamber, fast cooling device, driving device, tension detecting device, and speed detecting device.

HUANG D, LI H, LI X, LI Z, SHI H, WANG Z, WU J

Multi-station graphene fast growing device comprises fixing platform, vacuum pump, gas conveying pipeline, heating device, graphene growth processing cavity, sealing flange, vacuumizing port, air inlet, vacuum pump, and mobile device.

DUAN Y, HUANG D, LI H, LI Z, SHI H, WANG Z, WU J, YU J, ZHANG Y