国家/地区 中国（9）
IPC部 C（9）
IPC大类 C30（9） C25（2）
IPC小类 C30B（9）
IPC C30B029/02（8） C30B025/18（4） C30B025/00（3）
C25D001/20（2） C30B001/02（2） C30B029/64（2）
C30B033/02（2）
发明人 WANG E（9）
公开年 2016（2） 2021（2）
申请年 2016（2）  2017（2）  2021（2） 
专利权人 UNIV PEKING（7） SONGSHAN LAK.（2） ZHONGKE JING.（2）

Preparing low transmission loss single crystal copper material comprises e.g. forming single crystal copper layer on substrate i.e. graphene layer surface, and peeling off single crystal copper layer from substrate in mixed gas atmosphere of argon and hydrogen.

WANG E, YUE X, HUANG Z, HE M, ZHANG Z, DING Z

Cathode roller useful in electrolytic copper foil mechanism for preparing electrolytic copper foil, comprises annular base copper foil formed on peripheral wall of roll-shaped main body and is electrically connected to main body, and graphene film formed on surface of copper foil of base material.

WANG E, HE M, YUE X, HUANG Z, DING Z, ZHANG Z, LIU K

Preparing two-dimensional single crystal material lamination with large size and interlayer corner comprises growing first and second two-dimensional single crystal material and introducing inert gas and reducing gas, heating and bonding.

LIU K, LIU C, WANG Q, GONG D, WANG E, YU D

Growing single-crystal graphene using single crystal copper foil with any index surface, by preparing single crystal copper foil, selecting single crystal copper foil as substrate, and growing crystal graphene on single crystal copper foil.

LIU K, ZHANG Z, YU D, WANG E

Continuous preparation of ultra-large single crystal film useful in e.g. graphene film, involves heating single small crystal domain and growing ultra-large single crystal film on surface of high-temperature resistant substrate.

WU M, ZHANG Z, XU X, YU D, WANG E, LIU K

Manufacture of single crystal copper-nickel alloy for preparing multilayer monocrystalline graphene, involves carrying out nickel plating on single crystal copper foil, and annealing to obtain copper single crystal copper foil.

ZHANG Z, XU X, WU M, YU D, WANG E, LIU K

Preparation of continuous large single crystal graphene by mixing raw materials, and subjecting to rotating device for continuous growth of graphene on surface of substrate.

LIU K, YU D, WANG E, ZHANG Z, XU X

Rapid continuous preparation of large crystal domain graphene thin film by setting metal foil into oxide substrate, and growing on surface.

LIU K, YU D, WANG E, ZHANG Z, XU X

Oxide substrate-assisted preparation of large-size monocrystalline graphene by placing metal foil on oxide substrate, and growing high-quality large-size monocrystalline graphene on metal foil surface.

LIU K, ZHANG Z, XU X, YU D, WANG E