国家/地区 中国（21）
IPC部 C（21）
IPC大类 C30（21） H01（5） C23（4）
B82（3） C01（3） H05（3）
B22（2）
IPC小类 C30B（21）
IPC C30B029/02（11） C30B025/18（5） C30B025/02（4）
B82Y030/00（3） B82Y040/00（3） C01B031/02（3）
C30B025/00（3） C30B029/60（3） C30B033/00（3）
B22F001/00（2） B22F009/24（2） C01B031/04（2）
C30B029/52（2） C30B029/62（2） H05K009/00（2）
发明人 CHAI Z（4） HAN D（4） HAO Y（4）
WANG D（4） YAN Y（4） ZHANG J（4）
MA T（3） NING J（3） LI X（2）
LIU Z（2） MA S（2） PAN G（2）
SUN G（2） WANG G（2） WANG Z（2）
公开年 2014（21）
申请年 2013（11）  2014（8）  2012（2） 
专利权人 UNIV XIDIAN（4） SHANGHAI INS.（2） UNIV BEIJING.（2） UNIV BEIJING.（2）

Large-surface-area single-crystal monolayer graphene material for e.g. transparent electrode, has graphene layer arranged on flat board or catalytic layer, where catalytic layer is arranged on crystal plane that is arranged on substrate.

PARK H B, KIM H, YOON H W, PARK S M, LEE M Y, HO B P, HEE W Y, SUN M P, YONG L M, LEE M, PARK H, PARK S, YOON H

Preparation of single-crystal graphene domain involves performing chemical vapor deposition on specific-plane of semiconductor material as catalytic substrate using gaseous or solid carbon.

DI Z, WANG G, XUE Z, ZHANG M, ZHENG X, DAI J, WANG Z

Graphene film used in an electrode is obtainable by epitaxially growing metal layer on surface of substrate, peeling off the metal layer, and depositing graphene onto surface of metal layer.

WODTKE A, YU H K, ALEC W, HAK KI Y, YU H, YUK H K, YUK H

Stripping graphene thin film involves utilizing surface graphene thin film with substrate, growing graphene film directly on substrate or epitaxially growing material, and peeling off epitaxial material to obtain desired product.

DUAN R, LI J, SUN L, WANG G, WANG J, WEI T, ZHAO Y

Cubic phase cobalt/graphene composite material used as absorbing material, has monocrystalline structure, and comprises metal cobalt as face-centered cubic structure, and graphene as sheet-shaped structure.

MA S, MA T, PAN G, SUN G

Hexagonal phase cobalt-graphene polycrystalline composite material used as shielding material has stacked closely-packed cobalt and graphite sheets.

MA S, MA T, PAN G, SUN G

Preparation of sulfur-doped graphene by placing graphene in chemical vapor deposition reaction chamber, carrying out inert gas aeration and exhaust treatment, introducing sulfur source, and introducing hydrogen and inert gas atmosphere.

LI T, LIANG C, WANG Y

Deposition mask for forming patterned deposition material of e.g. organic light emitting display device, has carbon layer formed on surfaces of body portion and including carbon graphene, where openings are penetrated through surfaces.

HAN J

Preparing amino modified graphene oxide involves dissolving graphene oxide in solvent, depositing obtained paste on upper surface, fixing electric lead on support material using epoxy resin glue, and drying obtained electrode.

CAO H, LI M, LIU C, ZHANG Y

Preparing silicon carbide nanowhisker comprises uniformly mixing graphene and silicon powder, raising the mixture, sintering the mixture, cooling the sintered mixture and then calcining, and soaking calcined product in hydrofluoric acid.

KONG Q, LI X, CHEN C, LIU Z, CAI R