国家/地区 中国（8）
IPC部 C（8）
IPC大类 C23（8）
IPC小类 C23C（8） C01B（6） B82Y（4）
C30B（3） B32B（2） C04B（2）
H01L（2）
IPC C23C016/02（8）
发明人 DING G（3） JIANG M（3） LEI T（3）
TANG S（3） XIE X（3） ZHANG Y（3）
DENG P（2） GUO H（2） ZHANG K（2）
公开年 2012（8）
申请年 2011（5）  2012（3） 
专利权人 CHINESE ACAD.（3） SHANGHAI INS.（3） UNIV XIDIAN（3） DENG P（2）
GUO H（2） LEI T（2） ZHANG K（2） ZHANG Y（2）

Structural graphene production on silicon carbide substrate for manufacturing microelectronic devices includes depositing layer of silicon dioxide as mask, coating mask surface, and exposing to form structured pattern.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F

Manufacture of graphene on silicon carbide substrate involves producing double-layer carbon membrane, depositing nickel film on silicon substrate, placing carbon surface of double-layer carbon membrane on nickel membrane, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y

Graphene coated sheet for surface-treated steel plate used in e.g. car material, has graphene layer that is formed on steel sheet structure.

HWANG C C, JUNG Y G, HWANG H N, JEONG J I, YANG J H, JUNG Y, JEONG J, YANG J, HWANG H, HWANG C, GUK H C, IN J J, HUN Y J, GYUN J Y, NA H H

Method for growing graphene through chemical vapor phase deposition, involves using poly-benzene ring aromatic hydrocarbons as carbon source and using carbon source decomposition method or spin-coating method of carbon source.

DING G, JIANG M, SHEN H, SUN L, TANG S, WU T, XIE X

Method for epitaxially growing graphene on silicon carbide wafer involves processing silicon carbide wafer with hydrogen and silane to remove oxide produced on wafer surface, and supplying argon.

LEI T, WANG D, TANG X, LEI J, WANG Y, ZHANG Y, WANG H

Manufacture of graphene nano belt for electric component, involves preparing single atom layer and forming layer on insulating substrate, and directly growing.

CHEN J, DING G, JIANG M, TANG S, WANG C, XIE X

Preparation of diamond graphene composite film involves transforming graphene surface carbon bond crystal lattice type via controlling concentration of carbon source, active hydrogen atom, and matrix temperature, and growing diamond film.

HUA X, LI D, ZUO D, YE Z, ZOU A, ZHOU X, YU Y

Hexagonal boron nitride substrate used for manufacturing graphene nano belt used in electronic device, consists of boron nitride substrate layer and single atom layer.

DING G, JIANG M, TANG S, XIE X