国家/地区 中国（11）
IPC部 B（11）
IPC大类 B21（11） C22（11） C01（7）
B32（5） B82（5） C23（5）
B01（2） C21（2） C25（2）
H01（2）
IPC小类 B21B（11）
IPC C22F001/08（11）
发明人 CHIBA G（5） CHIBA Y（5） YOSHIHIRO C（4）
CHIBA YOSHIHIRO（2） TATSUYA Y（2） WANG D（2）
YAMAJI T（2） ZHANG X（2）
公开年 2012（3） 2021（3） 2013（2） 2022（2）
申请年 2012（5）  2021（4）  2022（2） 
专利权人 JX NIPPON MI.（5） NIPPON MININ.（5） NIPPON MININ.（5） NIPPON MININ.（3）

Preparing copper-graphene composite material involves utilizing mechanical alloying method to prepare copper and polymer powder to obtain copper-polymer powder, cold isostatic pressing copper polymer powder to get bar melting region to bar porous rod material.

LIANG J, ZHANG X, WANG D, LI X, ZHOU S, GUO G, BAO F

Preparing copper alloy semiconductor lead frame for circuit board, comprises heating copper alloy ingots, removing oxide, aging, adding copper alloy semi-finished product silver plating bath for silver-plated plating treatment, and activating.

CAO G, LI C, XU J, YIN H

Preparing copper-chromium-zirconium alloy layered belt material with composite deformation of graphene/copper, involves subjecting bulk copper-chromium-zirconium alloy to solid solution treatment, carrying out room temperature iso-channel extruding, low temperature rolling, stacking and vacuum-aging.

WANG D, AN X, DU Q, WEI K, YAO L, WEI W

Method for preparing high-strength and high-conductivity copper/graphene composite material, involves conducting electrical and thermal conductivity, tensile properties and other tests on rolled clad sheet and heat-treated clad sheet, and comparing and observing microstructures.

YI Y, WANG G, ZHANG S, YU H, ZHANG X, JIANG Q

Preparation method of graphene copper-based composite material, involves rolling interlayer blank sample by accumulation and rolling welding method to obtain rough blank, and annealing rough blank and cooling to obtain composite material.

CHEN S, LIU J, ZHANG Q, CHEN B, HAN Y, CHEN X, XU R, PANG Z, ZHOU M, ZHU Z, DING Y

High-strength alloy plate comprises nickel, silicon, molybdenum, lithium, magnesium, yttrium, platinum, rhenium, bismuth, tellurium, zirconium, and copper.

GE P, GUO D, HE W

Copper foil used for manufacturing graphene, comprises copper with specific purity.

CHIBA Y, ONO T, CHIBA G

Copper foil for manufacturing graphene, has specified arithmetic mean roughness in rolling parallel direction and rolling perpendicular direction.

CHIBA YOSHIHIRO, CHIBA Y, CHIBA G, YOSHIHIRO C

Copper foil for manufacturing graphene, has specified sum total of oxides and sulfides having diameter of below preset value before heating under hydrogen and argon-containing atmosphere.

CHIBA Y, YAMAJI T, YOSHIHIRO C, TATSUYA Y, CHIBA G

Copper foil for manufacturing graphene, has specified total number of oxide and sulfide having specified diameter with respect to elemental-analysis measurement of surface using scanning electron microscope.

CHIBA Y, YAMAJI T, YOSHIHIRO C, TATSUYA Y, CHIBA G