国家/地区 中国（13）
IPC部 C（13）
IPC大类 C01（13） C23（4）
IPC小类 C01B（13）
IPC C01B031/04（13）
发明人 DU C（13）
公开年 2013（8） 2015（4）
申请年 2013（5）  2014（4）  2012（3） 
专利权人 CHONGQING MO.（11） CHONGQING IN.（8） CHINESE ACAD.（5）

Continuous atmospheric pressure rapid graphene preparing device comprises box body, constant temperature annealing chamber, growing cavity, cooling cavity, clapboard, air inlet pipe, gas mixing room, reacting cavity body and cooling device.

GAO X, DU C, JIANG H, LI Z, SHI H, ZHANG Y, ZHU P, HUANG D

Transfer of graphene oxide doping by coating growth surface with polymer doped graphene transfer medium, attaching into target substrate, forming composite structure, vacuum pressure processing, heating and separating growth substrate.

GAO X, DU C, JIANG H, LI Z, SHI H, ZHANG Y, ZHU P, HUANG D

Preparing a graphene film through low-temperature fixed-point nucleating comprises e.g. coating layer of carbon source solution on metal substrate, drying, patterning on metal substrate, graphene nucleating, diffusing and cooling.

GAO X, DU C, JIANG H, LI Z, SHI H, ZHANG Y, ZHU P, HUANG D

Graphene preparation device includes constant temperature annealing cavity, air inlet pipe, mixed gas chamber, heater, cooling growth chamber, air cooling pipe, second valve, cooling cavity, feeding device and pressure release pipe.

GAO X, DU C, JIANG H, LI Z, SHI H, ZHANG Y, ZHU P, HUANG D

Transferable graphene film has graphene layer, release layer and adhering film layer.

DU C, LI C, LI Z, SHAO L, SHI H, ZHANG Y, WEI D

Preparation of graphene involves growing graphene layer on substrate which is uniformly coated with release layer, sticking graphene layer on transfer thin film, separating substrate, and forming graphene based on transfer thin film.

DU C, HUANG D, LI C, LI Z, SHAO L, SHI H, WEI D

High-temperature continuous graphene growing device has gas inlet mechanism that is arranged for providing graphene growth reaction gas into reaction chamber.

DU C, HUANG D, LI Z, SHI H, WEI D, ZHANG Y

Rapidly and non-destructively transferring graphene comprises coating adhesive on the surface of a target substrate, adhering with graphene, performing hot-press treatment or UV-irradiation curing treatment and growth substrate stripping.

DU C, HUANG D, LI C, LI Z, SHI H, TANG L, ZHANG Y

Preparation device of graphene, has growth chamber which is connected with vacuum-pumping device, and growth substrate of growth chamber is wound on coil that is connected with alternating current source.

SHI H, LI Z, DU C, ZHANG W

Graphene preparation device comprises gas supply system connected with vacuum chamber set on two rollers, annealing system connected with vacuum chamber, and rotating roller driving system provided with growth substrate.

SHI H, LI Z, DU C, ZHANG W