国家/地区 中国（31）
IPC部 C（31） B（11） H（8）
G（2）
IPC大类 C01（31） B82（8） H01（8）
C23（7） B32（2）
IPC小类 C01B（31）
IPC C01B031/04（31）
发明人 TAN H（4） WANG W（3） YANG J（3）
ZHANG X（3） CHEN J（2） GE C（2）
GUO X（2） HE M（2） JIANG J（2）
LI C（2） LI M（2） LIU Z（2）
QIN X（2） YANG G（2） ZENG Y（2）
公开年 2016（31）
申请年 2016（15）  2015（12）  2014（4） 
专利权人 WUXI GRAPHEN.（4） UNIV SOUTHEA.（2）

Method for synthesizing multi-layer graphene e.g. trilayer graphene, involves heat-treating catalytic metal layer on substrate while supplying methane gas, and synthesizing multi-layer graphene on heat-treated catalytic metal layer.

HAM M, SON M, HAM M H, SON M W, XIAN W, SUN M

Three-dimensional cage-like nano graphene material used as catalyst carrier or adsorbent material for manufacturing supercapacitors and lithium-ion battery has graphene thickness and cage diameter of specified range.

CHANG J, LIU B, LIU M, LIU R, SHAO Y, TANG Y

Preparing three-dimensional graphene involves depositing metal substrate on surface of wire mesh to obtain mesh template, growing graphene on template by chemical vapor deposition to obtain graphene-grown mesh template and etching with acid.

YANG G, WANG W, LIU Z

Preparation of graphene-based two-dimensional layered heterojunction includes passing hydrogen and a carbon source gas into reaction chamber including metal substrate, and heating to dissolve carbon in the metal substrate.

CHEN S, LI X

Preparation of ultrathin ultra-flexible graphene electroconductive thin film involves cutting target substrate and back film composite, pre-shrinking, forming film/graphene/substrate/back film, removing adhesive film and back film.

YANG J, TAN H, JI H

Transferring graphene prepared by chemical vapor deposition process involves processing target substrate, coating layer of polymer solution on target substrate, drying and removing solvent to obtain final product.

QIN X, YANG J, TAN H

Doping method of graphene for manufacturing graphene composite electrode and graphene structure, involves forming precursor polymer layer for doping on substrate, and positioning graphene on substrate.

MOON J, PARK W, PARK S, JO I, HONG B, SAN MOON J, SU C I, BAE P W, BEOM P S, HUI H B, ZHENSHAN W, WONBAE P, SUBEOM P, INSU J, BYUNGHEE H

Forming a graphene device, used to form sensor device, comprises forming a graphene film over a substrate, depositing a polymer material covering a surface of the film, by gas phase deposition, and removing the substrate from the film.

KALITA D, BOUCHIAT V, MARTY L, BENDIAB N

Controlling CVD graphene intelligent deformation comprises e.g. preparing graphene by chemical vapor deposition, loading the copper sheet into a quartz tube furnace, taking hydrogen, heating, removing the copper, stirring and drying.

JIANG D, LIU J, XU Y

Chemical vapor deposition (CVD) method for growing large area graphene at low cost, involves using untreated rolled metal as substrate of CVD graphene growth and using surface of residual grease as carbon source of graphene growth.

CHENG H, MA L, REN W