国家/地区 中国（9）
IPC部 C（9） B（4） H（2）
IPC大类 C01（9）
IPC小类 C01B（9）
IPC C23C016/26（9）
发明人 LI Z（9）
公开年 2022（5）
申请年 2022（6） 
专利权人 CHINESE ACAD.（6） CHONGQING GR.（4） CHONGQING MO.（2）

Graphene carbide/silicon carbide composite material used in electromagnetic shielding device, comprises multiple graphene of silicon carbide crystal grains uniformly distributed to form thin film.

LI Z, ZHANG L, TU R, XU Q, ZHANG S

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Scale production device of high conductive graphene metal composite material, has sealing chamber that is provided with feeding area and high temperature area provided with heating mechanism, pressing mechanism and transport mechanism.

SHAO L, DUAN Y, SHI H, LI Z, ZHANG Y

Device for preparing high-conductivity graphene metal composite material, has gas circuit mechanism for introducing gaseous carbon source and auxiliary gas into sample chamber, plasma auxiliary decomposition chamber and hot-pressure chamber.

SHAO L, LI X, ZHANG Y, LI Z, DUAN Y, SHI H, HUANG D

Preparation device of metal layered graphene on solid carbon source, has heat compression chamber that is provided with auxiliary gas path mechanism introducing auxiliary gas into sample chamber, growth chamber and compression chamber.

SHAO L, LI X, ZHANG Y, LI Z, HUANG D, SHI H, DUAN Y

Preparing graphene metal layered composite material useful in aerospace industry, aviation industry and information industry, comprises pre-treating solid carbon source, growing graphene on many metal substrates and hot-pressing many graphene metal substrates.

SHAO L, LI X, ZHANG Y, LI Z, HUANG D, SHI H, DUAN Y

Preparing uniform graphene thin film by introducing metal substrate into chemical vapor deposition reaction chamber, heating chamber, annealing metal substrate and carrying out graphene nucleation on metal substrate surface.

GAO X, JIANG H, LI Z, SHI H, YANG G

Preparing a graphene film through low-temperature fixed-point nucleating comprises e.g. coating layer of carbon source solution on metal substrate, drying, patterning on metal substrate, graphene nucleating, diffusing and cooling.

GAO X, DU C, JIANG H, LI Z, SHI H, ZHANG Y, ZHU P, HUANG D

High-temperature continuous graphene growing device has gas inlet mechanism that is arranged for providing graphene growth reaction gas into reaction chamber.

DU C, HUANG D, LI Z, SHI H, WEI D, ZHANG Y