国家/地区 中国（9）
IPC部 C（9）
IPC大类 C30（9） H01（5） C01（3）
IPC小类 C30B（9）
IPC C30B025/00（3） H01L021/02（3） C01B032/194（2）
C30B029/02（2） C30B029/16（2） C30B029/64（2）
发明人 ZHANG S（9）
公开年 2021（3） 2019（2） 2023（2）
申请年 2021（3）  2019（2）  2022（2） 
专利权人 UNIV WUHAN T.（3） CHANGCHUN IN.（2）

Preparing wafer-sized gallium oxide film comprises e.g. cleaning gallium metal droplets to remove surface oxide film, placing pure gallium droplet on surface of heated substrate, and roll gallium droplet with extrusion rod coated with viscoelastic or rubbery polymer material on surface.

ZHANG L, TU R, LU P, ZHANG S, LI B

Van der Waals epitaxy method of high-quality aluminum gallium nitride materials on amorphous substrate, comprises e.g. transferring and processing first two-dimensional material layer on amorphous substrate, transferring second material layer on processed layer, performing hydrogenation passivation.

LI D, JIANG K, BEN J, ZHANG S, CHEN Y, LYU B, SUN X

Nitride templates based on metal substrates comprises metal substrate, two-dimensional material film, which is located on metal substrate one side, inert material pattern mask layer, nitride epitaxial layer, which is located on inert material pattern mask layer side away from the metal substrate.

ZHANG S, BEN J, JIANG K, LI D, CHEN Y, SUN X

Structural design of two-dimensional adjustable ferroelectric polarization material based on iron intercalated graphene oxide by simulating construction of iron intercalated graphene oxide crystal structure, performing structure optimization, applying strain and randomly distributing iron ions.

DONG Z, ZHANG S, ZHONG C, GENG C

Preparing anode composite material useful in lithium ion battery comprises heating anode material coated by catalytic material under carbon source gas atmosphere, generating carbon nano-tube on anode material and adding graphene for coating.

WANG Y, ZHANG S, WANG Z, MA J, BAI Y

Implementing airflow-free MPCVD single crystal diamond growth using a solid carbon source involves ultrasonic cleaning of diamond seed crystals with acetone, deionized water and absolute ethanol in sequence to obtain seed crystals.

ZHU J, LI Y, DAI B, HAO X, ZHAO J, ZHANG S

Method for growing large-area single crystal graphene, involves using nozzle corresponding to substrate pattern to carry out fixed point carbon source transportation and passing methane for fixed point nucleation for graphene growth.

LAN F, WANG Z, ZHANG S, DONG Z, HAO J

Preparing silicon/silicon carbide/graphene material involves pretreating single crystal silicon substrate into a substrate holder of a cold wall type laser chemical vapor deposition reactor, and vacuuming.

TU R, HU Z, ZHANG S, ZHANG L

Preparation of dendritic monocrystalline graphene for e.g. sensor, involves cleaning copper foil substrate with acetic acid and acetone, pre-annealing and pre-oxidizing substrate, chemical vapor depositing and cooling substrate.

TU R, ZHANGCHI T, ZHANG S, ZHANG L