国家/地区 中国（8）
IPC部 C（8）
IPC大类 C30（8） C23（2）
IPC小类 C30B（8）
IPC C30B029/02（7） C30B025/18（3） C30B029/64（3）
C30B025/00（2）
发明人 PENG H（8）
公开年
申请年 2015（2）  2017（2）  2021（2） 
专利权人 UNIV PEKING（8） BEIJING GRAP.（3）

Preparing a metal wafer substrate involves forming metal thin film on the sapphire substrate by magnetron sputtering, and annealing under mixed atmosphere of hydrogen and argon.

PENG H, YANG Y, CAO Y, TANG J, YAN R, DU Y

Preparation method of a large domain graphene single crystal, involves annealing sapphire/metal substrate with oxygen-containing gas and providing growth gas according to mode of increasing proportion gradient of growth gas, and growing on sapphire/metal substrate to obtain graphene single crystal.

LIU Z, PENG H, CAO Y, WANG Y, DU Y, TANG J, YAN R

Growing of graphene single crystals involves growing graphene on substrate by chemical vapor deposition, and introducing oxidizing gas during growth process.

LIU Z, PENG H, CHEN B, SUN L, LI Y, LIU H, WANG Y, CAI A, DING Q, ZHAO Z

Nitrogen-doped large single crystal graphene film used as transparent conductive film for e.g. transparent electrode, is obtained by doping nitrogen atom into graphene lattice by graphite nitrogen.

LIU Z, PENG H, LIN L, SUN L, ZHANG J

Preparing graphene single crystal film comprises laminating copper single-crystal thin film/sapphire, annealing and depositing on single-crystal thin film surface under atmospheric pressure chemical vapor deposition.

PENG H, DENG B, LIU Z

Preparation method for single crystal graphene structure, has annealing copper foil at constant temperature, and reducing temperature of copper foil to room temperature.

LIN L, LIU Z, PENG H, SUN L

Preparing large single crystals of graphene involves annealing copper substrate in low reducing atmosphere to obtain copper substrate and then treating copper substrate with triazine derivative in steam atmosphere.

LIN L, LIU Z, PENG H, REN H

Modulation-doped single-crystal graphene pn junction prepared by putting copper foil into reactor, introducing mixed gas and inert gas into the reactor, passing mixed gas into copper foil, and cooling, useful in logic device.

WU D, YAN K, LIU Z, PENG H