国家/地区 德国（6）
IPC部 B（6） H（5） C（4）
IPC大类 H01（5） B82（3） C01（3）
B05（2）
IPC小类 C01B（3） H01L（3） B05D（2）
B82B（2） B82Y（2）
IPC C01B031/02（2） C01B031/04（2）
发明人
公开年 2010（6）
申请年 2008（6）
专利权人 GM GLOBAL TE.（2） GM GLOBAL TE.（2）

Unipolar hetero-junction depletion-layer transistor for use in high frequency circuit utilized for e.g. wireless communication, has tunnel diode permitting current of carriers in direction of collector, where base includes graphene layer.

LIPPERT G, MEHR W

Product comprises shape memory polymer material and graphene material incorporated into the shape memory polymer material to form a polymer system.

CHENG Y T, XIAO X, XIE T, SHAW X

Manufacturing carbon nanotube-, fullerene- and/or graphene-containing coating for use as electromechanical component or lead frame, involves applying carbon nano-tubes, fullerene or graphene on tin-containing coating by mechanical treatment.

ADLER U, BURESCH I, PRIGGEMEYER S, RODE D, SCHMIDT H, ROHDE D

Graphene nanostructure fabricating method for semiconductor device, involves performing anisotropic etching by using aligned oxide nanostructure as mask, and removing remaining oxide nanostructure after anisotropic etching.

HONG S, KIM T H, LEE J, HONG S H, LEE C Y, KIM T

Flow field plate for fuel cell applications comprises graphene-containing layer having carbon layer surface with small contact angle and disposed over metal plate.

ABD E M H, DADHEECH G V, MIKHAIL Y M, TRABOLD T A, DOSHIRCI G V, FALTA S R, ELHAMID M H A, ABBOUD E M H, TERRABOD T A

Device for cutting graphene, includes reception to receive graphene, cutting element loaded with catalytically active material in cutting edge area, device to displace reception and cutting element with the cutting edge, and heating device.

KIRSTEIN S, RABE J P, SEVERIN N, RABE J