国家/地区 德国（6）
IPC部 C（6）
IPC大类 C23（6） C01（3）
IPC小类 C23C（6） C01B（3）
IPC C23C016/26（5） C01B032/186（3） C23C016/44（3）
C23C016/455（3） C23C016/46（3） C01B031/04（2）
C01B032/16（2） C01B032/182（2）
发明人 TEO K B K（5） CONRAN B R（3） JOUVRAY A（3）
MCALEESE C（3）
公开年 2022（2）
申请年 2014（2）  2020（2） 
专利权人 AIXTRON SE（6）

Deposition of two-dimensional layers on substrate in process chamber, involves heating substrate, feeding reactive gas of carbon-containing chalcogenide, and adjusting substrate temperature, process chamber pressure, and partial pressure of reactive gas so that graphene is deposited as layer.

MCALEESE C, CONRAN B R, TEO K B K

Deposition of two-dimensional layer on substrate in process chamber of chemical vapor deposition reactor, involves feeding one or more reactive gases into a process chamber and depositing spaced apart crystalline regions on surface of substrate under specific process parameters.

MCALEESE C, CONRAN B R, TEO K B K

Deposition of two-dimensional layer on substrate, involves feeding process gas through supply line into gas distribution chamber(s) of gas inlet containing gas outlet openings which open into process chamber, and heating substrate.

TEO K B K, MCALEESE C, CONRAN B R, MACALIZ C

Device used to deposit graphene, carbon nanotubes and other coating, preferably carbon on strip-shaped element, comprises heat transfer-inhibiting unit placed between process zone and inlet opening and/or an outlet opening.

JOUVRAY A

Separating carbon structure including e.g. graphene and carbon nanotube deposited on seed structure, comprises e.g. providing carbon structure into processing chamber, heating carbon structure and seed structure, and supplying etching gas.

MATHARU J, THOMAS S, TEO K B K, JOUVRAY A, JOUBEUREI A, MATARU J, TOMASEU S

Apparatus for separating carbon-containing structures in form of nanotubes or graphene, has plate-shaped component that is arranged in process chamber housing and inserted in retaining recess formed in wall of process chamber housing.

RIPPINGTON D E, JOUVRAY A, RUPESINGHE N L, TEO K, TEO K B K, RUPESINGHE N