国家/地区 法国（16）
IPC部 B（16）
IPC大类 C01（16） B82（14） C23（6）
H01（6） B01（4） B05（4）
B32（4） C30（4） C09（3）
C08（2） C25（2）
IPC小类 C01B（16）
IPC C01B031/02（16）
发明人 BACSA R（2） BEGIN D（2） BERNHARDT P（2）
CHIZARI K（2） COJOCARU C（2） ERSEN O（2）
JANOWSKA I（2） LEDOUX M（2） OUERGHI A（2）
PHAM H C（2） ROMERO T（2） SERP P（2）
ZENASNI A（2）
公开年 2013（5） 2010（3） 2011（3） 2009（2）
申请年 2011（6）  2009（3）  2008（2）  2010（2） 
专利权人 CENT NAT REC.（9） COMMISSARIAT.（6） CNRS CENT NA.（3） COMMISSARIAT.（3）
ECOLE POLYTE.（2） INST NAT POL.（2） UNIV STRASBO.（2）

Manufacture of graphene platelets involves providing graphite blocks between every two graphene layers, introducing forward airflow and reverse airflow into chamber, and applying shear airflow to graphite block.

LIN Y, TSAI C, LEE T, CAI Q, LI T

Making multiwalled carbon nanotube used in circuit of conductive tip device, by depositing nanoplot made of catalyst material on substrate, and growing nanotube and graphene plane at apex of nanotube by depositing carbon in vapor phase.

LEGAGNEUX P, GANGLOFF L, MAZELLIER J P, ANDRIANIAZY F, COJOCARU C, MAURICE J L, MAZELLIER J, COJOCARU C S, MAURICE J

Coproducing carbon nanotube and graphene used in polymer matrix, by decomposition at high temperature of carbon source in gas state, comprises contacting carbon source with catalyst comprising mixture of active catalyst-A and catalyst-B.

BEAUSOLEIL J, SERP P, BACSA R, CAUSSAT B

Producing graphene comprises contacting solid catalyst in divided state comprising mixed oxide with gaseous composition flow comprising carbon source, where solid catalyst has single crystal structure and average crystalline domain size.

BACSA R, SERP P

Preparing graphene i.e. free of metal contamination and magnetic and organic impurities, used to make battery, comprises reacting graphene oxide dispersion in a solvent, with tin compound and optionally with acid compound, and acid washing.

DUBOIS L, GAMBARELLI S, NANJUNDAN A

Forming graphene layer on surface of substrate, comprises gradually heating substrate until sublimation of silicon of first row of atoms of free surface of silicon-carbide film, where free surface of silicon layer is stepped.

OUERGHI A

Forming graphene layer on surface of substrate, comprises forming silicon-carbide film on free surface of silicon layer and gradually heating substrate until silicon of first row of atoms of silicon-carbide film is sublimated.

OUERGHI A

Fabricating structure comprising graphene sheet equipped with metal pads, comprises synthesizing graphene sheet on many metal pads that are laid on membrane of dielectric material, and optionally eliminating the membrane.

ZENASNI A, CORAUX J, IVANOVAHRISTOVA V, LANDIS S, PERNEL C

Manufacturing structure comprising semiconductor substrate and modified graphene layer, comprises supplying initial structure comprising standard graphene layer, and hydrogenating initial structure with exposure dosage of hydrogen gas.

CHIANG S, ENRIQUEZ H, OUGHADDOU H, SOUKIASSIAN P, TEJEDA G A, VIZZINI S, TEJEDA GALA A, GALA A T

Preparing dispersion of graphene particles/sheets in liquid medium comprises providing bar/block of solid material made of graphite, rubbing material on substrate surface and dipping substrate in medium and subjecting medium to ultrasound.

JANOWSKA I, BEGIN D, CHIZARI K, ERSEN O, BERNHARDT P, ROMERO T, LEDOUX M, PHAMHUU CUONG, PHAM H C, PHAMHUU C