国家/地区 英国（6）
IPC部 H（4） B（2） C（2）
G（2）
IPC大类 H01（4） G01（2）
IPC小类 H01L（4） G01N（2）
IPC H01L021/336（3） H01L029/16（3） H01L029/78（3）
H01L029/786（3） H01L051/05（3） H01L021/28（2）
H01L021/316（2） H01L029/06（2） H01L029/423（2）
H01L029/66（2） H01L029/76（2） H01L051/00（2）
H01L051/30（2）
发明人 LIN Y（2） LIN Y M（2）
公开年 2011（4） 2012（2）
申请年 2010（6）
专利权人 INT BUSINESS.（4） IBM UK LTD（3）

Electronic device e.g. biosensor used in biomedical applications, has source/drain electrodes which angled to gate electrodes so that graphene element is addressed individually by selection of gate electrode and source/drain electrode.

PAN G

Graphene-based field effect transistor for high-frequency electronics, comprises graphene layer located on insulating layer, first and second metal portions, first and second electrodes, gate dielectric layer, and dielectric seed layer.

AVOURIS P, FARMER D B, LIN Y, ZHU Y, LIN Y M

FET formation by depositing channel material comprising graphene or nanostructure on substrate, depositing contact material over channel material, gate, and spacers, and patterning contact material to form self-aligned contact for FET.

CHANG J, LAUER I, SLEIGHT J, CHANG J B

Graphene FET comprises a gate stack including a seed layer, a gate oxide formed over the seed layer and a gate metal formed over the gate oxide, an insulating layer, a graphene sheet, a spacer, and a source contact and a drain contact.

LIN Y, JENKINS K A, VALDES GARCIA A, VALDESGARCIA A, GARCIA A V, VALDES G A, LIN Y M

Electrically activating a structure having graphene layers formed on a silicon carbide layer comprises subjecting the structure to an oxidation process.

MCFEELY F R, YURKAS J J, OIDA S, HANNON J B

Sensor for detecting biological molecule comprises graphene structure; two electric contacts arranged in contact with graphene structure; and linker attached to graphene structure, where graphene has binding affinity for biological molecule.

GUY O J