国家/地区 中国（9）
IPC部 C（9） B（6） H（6）
IPC大类 C01（9） C07（7） C08（6）
H01（6） B82（5）
IPC小类 C01B（9） C07C（6） C08G（6）
B82Y（5） H01L（5） B82B（2）
C07B（2） H01B（2）
IPC C01B031/04（9） C01B031/02（6） C08G061/10（6）
B82Y040/00（5） B82Y030/00（4） C01B032/182（4）
C01B032/184（3） C07C015/14（3） C07C025/18（3）
C07C025/22（3） H01L029/16（3） H01L051/00（3）
B82B003/00（2） C01B031/00（2） C07C015/20（2）
发明人 MULLEN K（9）
公开年 2013（4） 2015（3） 2014（2）
申请年 2012（3）  2013（3）  2014（2） 
专利权人 BASF SE（9） MAX PLANCK G.（8） BASF CHINA C.（6） BASF AG（4）
BASF SCHWEIZ.（2） EMPA EIDGENO.（2） EMPA MATERIA.（2）

New ortho-terphenyl derivatives used for preparing graphene nanoribbons for thin film semiconductor for use in optical device, such as organic field effect transistor device, organic photovoltaic device or organic light-emitting diode.

SCHWAB M G, MULLEN K, FENG X, DUMSLAFF T, RUFFIEUX P, FASEL R, MUELLEN K

Preparation of graphene used as exciting material, involves thermally pretreating substrate in chemical deposition chamber using gaseous or supercritical oxidant, and preparing graphene on pre-treated surface by chemical deposition.

STRUDWICK A, SCHWAB M G, MUELLEN K, SACHDEV H, WEBER N, BINDER A, MULLEN K, STRUDWICK A J, WEBER N E

Graphene nanoribbon comprises repeating unit comprising edge carbons which can unambiguously be assigned as zigzag or cove type carbon atoms.

SCHWAB M G, MUELLEN K, FENG X, YANG B, DUMSLAFF T, FASEL R, RUFFIEUX P, LIU J, CAI J, SANCHEZSANCHEZ C, MULLEN K, SANCHEZ S C, TSAI J, MILLEN K

Edge-halogenation of graphene material used for electronic/optical/optoelectronic device involves reacting graphene material e.g. graphene, graphene nanoribbon, and/or graphene molecule with halogen-donor compound in presence of Lewis acid.

HINTERMANN T, MUELLEN K, FENG X, TAN Y, MULLEN K, TAN Y Z

New oligophenylene monomer useful in polymeric precursor for preparing graphene nanoribbons that used are in thin film semiconductor of electronic, optical, or optoelectronic device e.g. organic field effect transistor device.

MUELLEN K, FENG X, CAI J, RUFFIEUX P, FASEL R, NARITA A, TSAI J, MULLEN K, MILLEN K

Graphene nanoribbon used for e.g. spintronic device, contains repeating unit having modification(s) chosen from heteroatomic substitution, vacancy, stone-wales defect, inverse stone-wales defect, and hybridized carbon network.

FASEL R, RUFFIEUX P, MUELLEN K, CAI J, FENG X, BERGER R, TSAI J, CAI Y, MULLEN K, MILLEN K

New oligophenylene monomer useful for preparing a polymeric precursor for producing graphene nanoribbons useful in an electronic, optical, or optoelectronic device.

SCHWAB M G, NARITA A, FENG X, MUELLEN K, MULLEN K, SCHWAB M G S, SCHVAB M G, MILLEN K

Segmented graphene nanoribbon useful for generating heterojunctions and heterostructures, comprises at least two different graphene segments covalently linked to each other.

BLANKENBURG S, CAI J, FASEL R, FENG X, MUELLEN K, PASSERONE D, PIGNEDOLI C, RUFFIEUX P, MULLEN K, PIGNEDOLI C A, TSAI J, CAI Y

New graphene nanoribbon precursors comprising polycyclic aromatic hydrocarbon repeat units, used in graphene nanoribbons for field-effect transistors.

SCHWAB M G S, MUELLEN K, FENG X, DOESSEL L, SCHWAB M G, MULLEN K, DOSSEL L, SCHVAB M G