国家/地区 日本（104）
IPC部 C（104）
IPC大类 C01（104） H01（56） B82（30）
B32（14） B01（13） C08（11）
C09（10） C23（9） C22（6）
C25（6） C30（5） H05（5）
B05（4） C07（4） G01（4）
IPC小类 C01B（104）
IPC C01B031/02（104）
发明人 CHIBA Y（6） CHENG Q（4） SATO M（4）
TANG J（4） YAMAZAKI Y（4） FUKIDOME H（3）
HASEGAWA M（3） ISOBAYASHI A（3） KAJITA A（3）
MAKABE I（3） MATSUMOTO T（3） NAKABAYASHI T（3）
NAKASUGA A（3） SAI J（3） SAITO T（3）
公开年 2014（104）
申请年 2013（61）  2012（25）  2014（18） 
专利权人 DOKURITSU GY.（10） NAT INST ADV.（7） JX NIPPON MI.（6） TOSHIBA KK（6）
FUJITSU LTD（4） NAT INST MAT.（4） PANASONIC CO.（4） SEKISUI CHEM.（4）
BASF CHINA C.（3） BASF SE（3） DOKURITSU GY.（3） FUJI ELECTRI.（3）
MAX PLANCK G.（3） NEC CORP（3） NIPPON MININ.（3） NIPPON TELEG.（3）
SUMITOMO ELE.（3） TOKYO ELECTR.（3） UNIV NAGOYA（3） UNIV TOHOKU（3）

Separating graphene used for e.g. semiconductor device, comprises providing container including graphite particle, graphene and solvent, separating graphite particles from container using magnetic field, and discharging solvent from outlet.

KITAURA H, NISHIKI N, NISHIKAWA K, NAKAYA K, TANAKA A, NAKATANI K, NISHIGI N, TANAGA A

Substrate for electronic apparatus e.g. electronic device comprises nitride semiconductor layer which is provided on upper surface of silicon substrate, silicon carbide layer, and graphene layer.

SAI J, FUKIDOME H, SUEMITSU M, MAKABE I, NAKABAYASHI T, TATENO Y

Manufacture of substrate for electronic apparatus, involves forming silicon carbide layer on silicon substrate, planarizing upper surface of silicon carbide layer, and forming graphene layer in upper surface of silicon carbide layer.

SAI J, SUEMITSU M, FUKIDOME H, MAKABE I, NAKABAYASHI T, TATENO Y

Manufacture of substrate for electronic apparatus, involves forming silicon carbide layer on silicon substrate, heating upper surface of silicon carbide layer using gas, and forming graphene layer on surface of silicon carbide layer.

SAI J, SUEMITSU M, FUKIDOME H, MAKABE I, NAKABAYASHI T, TATENO Y

Production of graphene hollow structure body for graphene spherical hollow body integrated electrode and graphene spherical hollow body integrated capacitor involves mixing and dispersing polymer molding and graphene oxide powder.

SHAO Q G, QIN L C, TANG J

Graphene powder used as conductive support agent of lithium-ion battery electrode, is formed by adhering dispersing agent having quinophthalone skeleton and polar group to graphene surface.

SHIGETA K, KUBOTA Y

Defect repairing method of graphene film e.g. planar crystalline carbon film, involves irradiating laser by giving carbon source to portion identified as defect portion of film, and restoring local defect of film.

OKIKAWA Y, ISHIHARA M, OMURA H, HASEGAWA M

Porous composite carbon material used as e.g. electronic material, comprises graphene and aminated carbon nanotube containing amino group, where graphene is bonded with surface of aminated carbon nanotube by (pi)-(pi) interaction.

SUMIYA T, SHIMOMURA T, SUZUKI M, ONO M, YOKOYAMA T, ISHIZAKA T, HANAOKA T, MINAKAMI F, SUZUKI T

Copper foil used for manufacturing graphene for e.g. separator for fuel cells, mercury-free fluorescent lamp and composite material, comprises sulfur, oxygen, copper and oxygen gas, when copper foil is heated at specified conditions.

CHIBA Y

Structural material for capsule used for enclosure of wet sample comprises graphene film which is formed of graphene laminated on single layer on surface of substrate, and recessed part which removes substrate partially from back surface.

KO P J, ISHIDA M, KOIDE S, SANDHU A