国家/地区 日本（6）
IPC部 B（6）
IPC大类 B32（6）
IPC小类 B32B（6）
IPC B32B009/00（5） H01L021/336（4） H01L029/16（4）
H01L029/786（4） C01B032/15（3） C01B032/18（3）
C01B032/182（3） C01B032/184（3） H01L021/02（3）
H01L029/06（3） H01L029/66（3） B32B018/00（2）
C01B032/956（2） H01L029/78（2）
发明人 TATENO Y（6）
公开年 2017（3） 2021（2）
申请年 2017（2）  2020（2） 
专利权人 SUMITOMO ELE.（6） UNIV TOHOKU（4）

Laminate used in electronic device, comprises base portion composed of silicon carbide and having specific surface which is silicon surface and graphene film on specific surface, where ion mass distribution in depth direction of laminate obtained by time-of-flight secondary ion mass spectrometry.

MIHASHI F, ADACHI M, YAMAMOTO Y, TATENO Y

Layered body useful in electronic element, such as transistor, comprises base portion comprising silicon carbide and having surface which is silicon surface, and carbon atom thin film arranged over surface and comprising carbon atoms.

MITSUHASHI F, TATENO Y, ADACHI M, YAMAMOTO Y

Stacked body for use in electronic device, has exposed surface which is being main surface opposite to substrate, and regions each including graphene layers and having circumcircle with predetermined diameter range.

OKADA M, MITSUHASHI F, UENO M, TATENO Y, SUEMITSU M, FUKIDOME H, MIHASHI F

Stacked body used in electronic device such as transistor ,has graphene film arranged on first main surface and having atomic arrangement oriented in relation to atomic arrangement of silicon carbide forming substrate.

OKADA M, MITSUHASHI F, TATENO Y, UENO M, SUEMITSU M, FUKIDOME H, MIHASHI F

Laminated body for use in FET, has graphene film fixed on main surface of substrate portion, where film comprises atomic arrangement and exposed surface of graphene film is main surface of graphene film opposite to substrate portion.

MITSUHASHI F, ISHIZUKA T, UENO M, TSUKUDA Y, TATENO Y, SUEMITSU M, FUKIDOME H, NAGASAWA H, MIHASHI F

Manufacture of substrate for electronic apparatus, involves forming silicon carbide layer on silicon substrate, heating upper surface of silicon carbide layer using gas, and forming graphene layer on surface of silicon carbide layer.

SAI J, SUEMITSU M, FUKIDOME H, MAKABE I, NAKABAYASHI T, TATENO Y