国家/地区 韩国（29）
IPC部 C（29）
IPC大类 C01（29）
IPC小类 C01B（29）
IPC C01B031/02（25） C23C016/26（20） C01B031/04（16）
B82Y040/00（9） B82Y030/00（8） C01B032/186（6）
C23C016/02（5） C23C016/06（5） H01L021/02（4）
H01L021/205（4） H01L029/16（4） B32B009/00（3）
C23C016/44（3） H01L021/31（3） B01J019/12（2）
发明人 GUO S（2） HONG B（2） JUNG M（2）
KIM T（2） LEE J（2） LEE J H（2）
LEE J S（2） MOON J（2） OZKAN C S（2）
OZKAN M（2） PARK S（2） WANG W（2）
公开年 2014（14） 2015（8） 2013（7）
申请年 2013（29）
专利权人 SAMSUNG ELEC.（4） KOREA ADVANC.（3） UNIV SUNGKYU.（3） GUO S（2）
LG ELECTRONI.（2） NIPPON MININ.（2） OZKAN C S（2） OZKAN M（2）
SAMSUNG TECH.（2） UNIV CALIFOR.（2） WANG W（2）

Doping graphene, comprises preparing dispersed solution of the molecules having molecular structure linearly connected with two aromatic rings, applying the obtained solution on graphene, and drying the solution.

MOON J, HONG B, PARK S, JUNG M, CHOI M

Formation of binder-free hybrid carbon nanotube and graphene nanostructure for energy devices, involves forming on substrate, depositing catalyst particles and growing nanotubes on graphene layer using ethylene/hydrogen mixture.

WANG W, GUO S, OZKAN C S, OZKAN M

Energy device used in supercapacitor application, comprises porous metal substrate, graphene layer deposited onto surface of porous metal substrate, carbon nanotubes, and metal oxide nanostructures.

WANG W, GUO S, OZKAN C S, OZKAN M

Synthesizing graphene using copper vapor, comprises preparing substrate, placing copper foil on substrate, forming copper vapor from copper foil, and contacting graphene precursor gas on substrate for synthesizing graphene on substrate.

CHOI H C, KIM H K, SONG I T

Production of uniformly-doped large area multi-layered graphene element used for display/screen of electric/electronic device, involves forming openings in graphene sheet, and holding graphene element and dopant at elevated temperature.

RUSSO S, CRACIUN M, BOINTON T H

Use of amine precursor or its ammonium salt for depositing graphene film on substrate by chemical vapor deposition (CVD).

SCHWAB M G, MUELLEN K, SACHDEV H, ITO Y, SCHWAB M G S, MILLEN K

Formation of graphene layer on substrate used for semiconductor device, involves forming carbon source layer and metal catalyst layer on substrate, converting carbon source layer into graphene layer and removing metal catalyst layer.

BAEK J, JEON S, LEE J, BAEK J W, JEON S W, LEE J S

Manufacture of single crystal graphene film involves melting catalyst layer on substrate, cooling molten catalyst, forming catalyst region, and expanding catalyst region to expand cooling area of catalyst layer.

HAN I T, KIM H J, KIM S G, KIM Y C, LEE J H, YOO J B

Graphene useful as an electrode in an electronic device, processed via ion beam treatment method.

KIM S Y, KWON K C

Synthesis of graphene involves coating anti-corrosive material to surface of catalyst metal foil, placing catalyst metal foil coated with anti-corrosive material in chemical vapor deposition chamber and creating vacuum in chamber.

WON D K, KIM N Y