国家/地区 韩国（7）
IPC部 B（7）
IPC大类 B01（7） C01（7） H01（7）
B82（2） C23（2）
IPC小类 B01J（7）
IPC B01J019/08（7）
发明人 CHOI J H（2） HWANG I T（2） JUNG C H（2）
公开年 2013（7）
申请年 2012（3）  2011（2）  2013（2） 
专利权人 KOREA ATOMIC.（2） KOREA HYDRO .（2）

Manufacturing graphene used e.g. as base material for electronic circuits, by attaching support layer on graphene layer, removing catalyst metal layer, disposing substrate on graphene layer, and separating support layer from graphene layer.

MOON J, PARK W, JUNG M, RHO J, SEO B

Manufacture of graphene used for e.g. thin conductive film, transparent electrode, memory device, solar cell, organic light-emitting device, and biodevice, involves irradiating gamma-ray to graphene oxide solution and reducing.

CHOI J H, HWANG I T, JUNG C H, PARK Y W

Preparing graphene used in e.g. memory device, comprises forming organic thin film on substrate, irradiating upper portion of organic thin film with radiation to cross-link organic thin film, and then carbonizing.

CHOI J H, JUNG C H, HWANG I T, KANG D W

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A

Manufacture of graphene thin film for transparent electrode, involves causing deposition plate which contacts with substrate to perform reciprocating linear motion above substrate, and coating graphene oxide solution.

CHANG S T, KO Y U, TAE J S, UN K Y, KO Y

Method of etching atomic layer of graphene used for semiconductor device, involves adsorbing reactive radical to surface of graphene, and irradiating energy source to graphene to which reactive radical is adsorbed.

YEOM G Y, LIM W S, MIN K S, KIM Y Y, OH J S

Manufacture of graphene sheet involves adding light energy to bulk graphite in solvent.

KWANG H R, TAE G C, CHANG I H, YEON S K