国家/地区 台湾（10）
IPC部 C（10）
IPC大类 C01（10） H01（4） B01（2）
C23（2） H05（2）
IPC小类 C01B（10）
IPC C01B031/04（4） C01B032/182（3） C01B032/20（2）
C23C014/06（2） C23C014/58（2） H05K007/20（2）
发明人 HUANG C（10）
公开年 2021（3） 2022（3）
申请年 2021（3）  2015（2）  2019（2） 
专利权人 METAL IND RE.（3） CTRON ADVANC.（2） FOUND METAL .（2） UNIV NAT CEN.（2）

Heat dissipation structure for electronic device e.g. mobile phone, has heat dissipation module whose side protrudes from top surface of heat generating element, and does not contact with surface of carrier.

HE M, HUANG H, HUANG C

Nanogel for preventing or treating disease or condition susceptible to amelioration by anticoagulant or antioxidant for e.g. thrombophilia, vascular thrombosis, comprises graphene-like nanosheet and polysaccharide.

LIN H, HUANG C, MAO J, WANG C, HUANG Z

Heat dissipation structure for use in electronic device, has heat dissipation module placed on surface of carrier, and including covering heating element, where setting position of module corresponds to heating element.

HE M, HUANG H, HUANG C

New zwitterionic copolymer useful as a dispersant for graphene oxide in cementitious materials.

HSU K C, GE J, LIU X Y, HUANG C

Heat transfer enhancement device, has substrate provided with heating surface, and graphene layer uniformly coated on heating surface and provided with graphene surface and working fluid, where working fluid is exchanged with surface of graphene.

YANG C, SU C, HUANG C, JHANG B

Large-area graphene transfer device, has transfer substrate provided with graphene layer on transfer substrate, and transfer composite layer provided on graphene layer, where adhesion force between graphene layer and transfer composite layer is smaller.

SU C, CHANG J, HUNG Y, HSIEH Y, HUANG C

Manufacturing negative plate of secondary battery, involves providing multiple sheets of functional graphene, and compressing functional graphene to faun graphene target.

HUANG C, CHIU S, CHU C, CHUANG Y, WANG C, WEI C, HUANG J, QIU S, ZHU J, ZHUANG Y, WANG Z, WEI J, WANG J

Capacitor for semiconductor device, has dielectric sheet arranged over first graphene structure, and second graphene structure provided on dielectric sheet and comprising multiple graphene layers.

JOU C, KO C, CHIU P, CHENG C, LU C, CHEN H, HSUEH F, HUANG C, JOU C P, KO C H, CHIU P W, CHENG C C, LU C C, HUANG C F, CHEN H N, HSUEH F L, HUANG Q, KE Z, QIU B, XUE F, ZHOU C, ZHENG Z, LV Z, WANN C H

Method for modifying e.g. I-V characteristics, of graphene i.e. semiconductor film, involves placing graphene film in vacuum environment, and radiating graphene film with electron beam to obtain graphene material.

HUANG C, CHU C, CHIU S, WANG C, WEI C, CHUNG C, WU B, HUANG J, QIU S, WANG J, ZHU J, WEI J, ZHONG C, HUANG C H, CHU C W, CHIU S M, WANG C C, WEI C M, CHUNG C J, WU B H

Manufacturing graphene layer by performing sputtering process to form graphite layer on substrate, and performing lithography process on graphite layer for thinning graphite layer and making graphite layer thinned to become graphene layer.

HUANG C, CHIU S, CHUNG C, WU B, HUANG J, QIU S, ZHONG C, HUANG C H, CHIU S M, CHUNG C J, WU B H