国家/地区 美国（20）
IPC部 C（20）
IPC大类 C01（20） B82（18） C23（9）
B32（8） H01（6） C03（3）
B29（2） B44（2） B81（2）
H04（2）
IPC小类 C01B（20）
IPC B82Y040/00（15） C01B031/04（14） C01B031/02（12）
B82Y030/00（10） B82B003/00（6） C23C016/26（6）
B32B009/00（4） B32B038/10（4） B32B009/04（3）
C03C015/00（3） C03C025/68（3） H01B013/00（3）
B29C065/18（2） B81C001/00（2） C23F001/02（2）
发明人 LIN X（20）
公开年 2012（8） 2013（7） 2015（3）
申请年 2011（8）  2012（7）  2014（4） 
专利权人 HON HAI PREC.（18） HONGFUJIN PR.（18） UNIV TSINGHU.（18） FAN S（3）
JIANG K（3） LIN X（3） LIU P（3） ZHANG L（2）

Secondary battery used for electronic device, comprises negative electrode comprising silicon-based negative electrode active material which is predoped with lithium amount corresponding to initial irreversible capacity, and electrolyte.

LIM H H, OH S M, LIM J C, HEE L, LIM J, LIN Z, WU X, LIN X

Carbon fiber film comprises carbon nanotube film containing carbon nanotubes joined end to end and extending along a same direction in which each carbon nanotube is joined with graphene sheets.

JIANG K, WANG J, FAN S, LIN X, LIU P

Method for making carbon nanotube composite wire, involves removing substrate to form carbon nanotube/graphene composite film and carbon nanotube/graphene composite film is curled and then twisted.

LIN X, LIU P, ZHANG L, JIANG K, FAN S

Manufacture of carbon nanotube composite wire, involves providing carbon nanotube array, drawing carbon nanotube film from carbon nanotube array using tool, and treating carbon nanotube film using graphene solution.

LIN X, WEI H, LIU P, ZHANG L, JIANG K, FAN S

Forming ultra-large graphene oxide thin films involves pre-intercalating sulfuric acid and nitric acid to interlayers of natural graphite flake, expanding graphite intercalation compound powders at high temperature, and further oxidizing.

KIM J K, JIA J, LIN X, KAN C MS M

Making strip shaped graphene layer used on semiconductor devices involves providing graphene film on metal substrate; adhering nanotube structure with strip-shaped gap on graphene film; applying voltage to nanotube graphene structure.

LIN X, JIANG K, FAN S

Making strip shaped graphene layer involves disposing carbon nanotube structure comprising drawn carbon nanotube film including carbon nanotubes on graphene film; removing graphene film and carbon nanotube structure.

LIN X, JIANG K, FAN S

Making strip shaped graphene layer involves providing graphene film on surface of substrate; drawing carbon nanotube film comprising carbon nanotube segments; disposing carbon nanotube composite on the film; applying voltage; and etching.

LIN X, JIANG K, FAN S

Making strip shaped graphene layer used as conductive layer in semiconductive device, comprises making drawn carbon nanotube film, disposing carbon nanotube composite, removing polymer material and etching nanotube segment and graphene film.

LIN X, JIANG K, FAN S

Making strip shaped graphene layer, comprises providing graphene film on substrate surface, disposing carbon nanotube structure on film, removing parts of film exposed by the strip-shaped gap by reactive ion etching, and separating.

LIN X, JIANG K, FAN S