国家/地区 美国（56）
IPC部 C（56）
IPC大类 C01（56） H01（36） B82（18）
C08（11） B01（10） C09（10）
C23（7） B05（4） C04（4）
B32（3） C02（3） C10（3）
B29（2） C25（2） C30（2）
IPC小类 C01B（56）
IPC C01B031/02（56）
发明人 SAKAI T（7） MIYAZAKI H（5） YAMAZAKI Y（5）
KAJITA A（3） KATAGIRI M（3） NAITO K（3）
SAITO T（3） WADA M（3） AKASAKA Y（2）
AKITA M（2） CESAREO G（2） CHANG H（2）
GARCIA S L J（2） GARCIA SAN LUIS J（2） HARADA Y（2）
公开年 2016（32） 2015（23）
申请年 2015（56）
专利权人 TOSHIBA KK（10） ANJU SCI TE.（2） DIRECTA PLUS.（2） ENERAGE INC（2）
FUJITSU LTD（2） GRAPHENE PLA.（2） KOTOBUKI TSU.（2） LG CHEM CO L.（2）
LG CHEM LTD（2） NINGBO INST .（2） REPSOL SA（2） TOKYO ELECTR.（2）
TOSHIBA CORP（2） UNIV SHINSHU（2） UNIV TAIWAN .（2）

Producing highly conducting film of highly oriented conductor-bonded graphene sheets, useful in thermal management device, comprises e.g. preparing graphene dispersion having discrete graphene sheets dispersed in fluid medium.

ZHAMU A, JANG B Z

Composite structure of graphene and carbon nanotube configured in a three-dimensional form used in electrodes, comprises graphene platelets, metal particles coated on graphene platelets, and carbon nanotubes formed on metal particles.

WU M Y, HSIEH C, PENG C, WU Y, XIE C, HSIEH C Y, PENG C S

Manufacture method of semiconductor device, involves forming graphene interconnect by patterning graphene film into which dopant is introduced.

WADA M, YAMAZAKI Y, MIYAZAKI H, KAJITA A, SAITO T, ISOBAYASHI A, ISHIKURA T, KATAGIRI M, SAKAI T

Obtaining graphene oxide, used to manufacture graphene oxide films, comprises adding an acid and a salt to graphite for obtaining graphite oxide, and exfoliating the graphite oxide by mixing it.

ZURUTUZA ELORZA A, ALONSO RODRIGUEZ B, ZURUTUZA E A, ALONSO R B, ELORZA A Z, RODRIGUEZ B A

Semiconductor device such as metal oxide semiconductor (MOS) transistor and capacitor, has graphene layer with first graphene layer and is provided on second catalyst region.

SAITO T, KITAMURA M, SAKATA A, WADA M, KAJITA A, SAKAI T

Surface modifying graphene for performing a surface modifying process on graphene, comprises placing a graphene powder mixed with surface modifying agent in closed container in vacuum, heating graphene powder and adjusting.

WU M Y, HSIEH C, PENG C, WU Y, XIE C, HSIEH C Y, PENG C S

Adsorbent for adsorption apparatus used for treating wastewater comprises graphene oxide.

NAITO K, SUZUKI A, IMADA T

Producing sheets of graphene, hexagonal boron nitride, molybdenum disulfide, tungsten disulfide or sheets of mixtures of same from powder of materials, involves emplacing powder of multilayered material between two solid substrates.

LOPEZ QUINTELA M A, SHMAVON SHMAVONYAN G, VAZQUEZ VAZQUEZ C, QUINTELA M A, SHMAVONYAN G, VAZQUEZ C, LOPEZ Q M A, SHMAVON S G, VAZQUEZ V C

Graphene wiring structure comprises multilayer graphene and interlayer composites provided between layers of multilayer graphene, such that portion of defect and grain boundary of planar graphene sheet are closed.

SAKAI T, MIYAZAKI H, KATAGIRI M, YAMAZAKI Y

Forming graphene structure, comprises forming body with protrusion and forming graphene layer at protrusion outer peripheral surface, or forming cylindrical opening in body and forming graphene layer at inner peripheral surface of opening.

IRSIGLER P, RUHL G, SCHULZE H, SHULZ H, RUHR G, ILSGLLE P