国家/地区 世界知识产权组织（6）
IPC部 H（5） C（4）
IPC大类 H01（5） C01（4） C23（4）
IPC小类 H01L（5） C01B（4） C23C（4）
IPC C01B032/186（4） C23C016/26（4） H01L021/205（3）
发明人 IFUKU R（3） MATSUMOTO T（3） WADA M（3）
KABUKI N（2） YAMADA H（2）
公开年 2022（4） 2023（2）
申请年 2022（6）
专利权人 TOKYO ELECTRON LTD（6）

Plasma processing apparatus such as capacitive coupling type plasma processing device has conductive material that is provided with conductive film formed on second surface not facing plasma processing space of silicon element.

SAKANE R

Semiconductor device comprises substrate containing patterned copper film containing manganese, graphene layer disposed over exposed surfaces of copper film, first manganese-containing diffusion barrier layer, and first dielectric layer.

CLARK R D

Film forming method by loading substrate into processing container, forming graphene film on substrate with plasma of process gas comprising carbon-containing gas, forming doped graphene film on substrate and/or graphene film with plasma of process gas comprising dopant gas.

YAMADA H, IFUKU R, MATSUMOTO T, KABUKI N

Substrate processing includes taking substrate into processing vessel, removing oxygen-containing layer on substrate using plasma of gas mixture including hydrogen-containing gas, and forming nucleation layer and graphene film on substrate using plasma of gas mixture including carbon-containing gas.

IFUKU R, MATSUMOTO T, WADA M, KABUKI N

Processing substrate by loading substrate into processing container, forming carbon film on substrate with plasma of mixed gas containing carbon-containing gas while inside of processing container is maintained at pressure, and changing inside of processing container.

WADA M, IFUKU R, MATSUMOTO T, YAMADA H, TAKASHI M

Film formation method involves forming metal film on silicon-containing film of substrate, forming a graphene film on metal film, where metal film is silicided by heating metal film, and continuously performing film forming process.

UEDA H, WADA M, ZHEN