国家/地区 日本（6）
IPC部 H（6） C（4） B（3）
IPC大类 H01（6） C01（4） B82（3）
IPC小类 H01L（6） C01B（4） B82Y（3）
IPC C01B031/02（4） H01L021/28（4） H01L021/336（4）
H01L029/06（4） B82Y030/00（3） B82Y040/00（3）
C01B031/04（3） H01L029/78（3） H01L029/786（3）
C01B032/182（2） H01L021/285（2） H01L021/3205（2）
H01L021/768（2） H01L023/532（2） H01L029/16（2）
发明人 SATO S（3） KAWABATA A（2）
公开年 2014（6）
申请年 2013（4）  2014（2） 
专利权人 NAT INST ADVANCED IND SCI TECHNOLOGY（6）

Electronic device e.g. graphene transistors, has nanocarbon material, electrodes connected to nanocarbon material, and lower layer and upper layer containing molecular material having doping function on nanocarbon material.

SATO S, YAMADA A, YAGI K, TAKAHASHI M

Graphene film for manufacture of electronic apparatus, comprises preset number of six-membered carbon rings which are linked and aligned in short direction, and edge structure along long direction which is completely of armchair-type.

YAMAGUCHI J, SATO S, YAMADA H, TANAKA K, YAMADA Y

Wiring structure used for semiconductor device e.g. large scale integration, comprises carbon nanotubes and graphene, which are connected electrically through metal block.

SATO S, KONDO D, SATO M, NIHEI M, KONDO T

Graphene structure used for transparent electrode, comprises substrate, base which is formed on top of substrate, and vertical graphene which grows from base and stands in vertical direction with respect to surface of substrate.

KAWABATA A

Graphene-carbon nanotube structure for refinement of wiring in semiconductor device, has substrate, base formed on substrate, vertical graphene which grows from base, and stands in vertical direction with respect to substrate surface.

KAWABATA A

Graphene transistor has gate structure portion which is formed by laminating insulating film and metal electrode on channel region of graphene that is formed on insulating film.

NAKAHARAI S, NAKABARAI S