国家/地区 世界知识产权组织（17）
IPC部 C（17）
IPC大类 C01（17）
IPC小类 C01B（17）
IPC C01B031/04（15） B82Y030/00（14） C01B031/02（14）
B82Y040/00（13） C23C016/26（9） H01B001/04（7）
B82B003/00（5） B32B009/00（4） C01B031/00（4）
C30B029/02（4） B05D005/12（3） C23F001/00（3）
H01L021/205（3） H01L029/16（3） H01L031/0224（3）
发明人 VEERASAMY V（4） VEERASAMY V S（4） KIM H K（3）
BAE S K（2） GANG B S（2） GEUN K H（2）
HONG B H（2） HUI H B（2）
公开年 2011（17）
申请年 2010（8）  2011（6）  2009（3） 
专利权人 GUARDIAN GLA.（4） GUARDIAN IND（4） GUARDIAN IND.（4） GRAPHENE SQU.（2）
VEERASAMY V .（2）

Method for depositing graphene on substrate for semiconductor device, involves heating substrate in chemical vapor deposition chamber and flowing carbon precursor into chamber.

PADHI D, JANZEN J, SHAIKH S, KIM B, CHIN B, KIM B H

Method for preparing single-layer and multi-layer graphene from chemical gas phase deposition, involves pouring carbon gas to vacuum cavity and maintaining flow rate of hydrogen gas, and obtaining metal substrate deposited with graphene.

QU Y

Manufacturing graphene comprises preparing a subject substrate, forming a metal thin film, supplying a carbon source material, heating, diffusing carbon atoms, and forming graphene on the subject substrate.

KWON S, PARK K, YOON E, KWAK J, KWON S Y, YOON U

Carbon-film laminate used for graphene-based electronic device, has monocrystal substrate, copper single-crystal thin film epitaxially grown on substrate, and graphene formed on copper single-crystal thin film.

HASEGAWA MASATAKA, ISHIHARA MASATOU, KOGA YOSHINORI, KIM JAEHO, TSUGAWA KAZUO, IIJIMA SUMIO, HASEGAWA M, ISHIHARA M, KOGA Y, KIM J, TSUGAWA K, IIJIMA S, YOSHINORI K, HO K J, KAZUO T, SUMIO I, MASATAKA H, MASATOU I, JAEHO K

Manufacture of graphene fiber used for e.g. coaxial cable, involves forming linear pattern on substrate having metal layer, reacting linear pattern having metal layer with reactive gas, and impregnating substrate with linear pattern.

BAE S K, HONG B H, KIM H K, KIM K S, HUI H B, SU K G, GEUN K H, GANG B S

Forming a nano-perforated graphene material, comprises forming an etch mask defining an array of holes over a graphene material and patterning the array of holes into the graphene material.

ARNOLD M, GOPALAN P, SAFRON N S, KIM M, ARNOLD M S

Roll-to-roll doping method for large-area graphene area, involves passing graphene film through doping solution that contains dopant or dopant vapor for doping graphene film.

AHN J, BAE S, HONG B H, KIM H K, BAE S K, GANG B S, GEUN K H, HUI H B, HYEON A J

Applying a coating composition on substrate comprises preparing a coating by mixing carbon in form of carbon nanotubes, graphene and/or fullerenes with metal particles and two-dimensionally or selectively applying the coating on substrate.

ADLER U, RODE D, BURESCH I, WANG J, FRECKMANN D, SCHMIDT H, ROHDE D, WANG Y

Graphene film for composite complex contains several graphene domains each having specified area.

AGO HIROKI, ITO YOSHITO, TANAKA IZUMI, MIZUNO SEIGI, TSUJI MASAHARU, AGO H, ITO Y, TANAKA I, MIZUNO S, TSUJI M, MIZUNO K

Substrate for fabrication of semiconductor element, has graphene layer formed by chemical vapor deposition using metal catalyst, compound or alloying layer and oxide layer for diffusing metal catalyst sequentially formed on metal layer.

HIURA H, TSUKAGOSHI K