国家/地区 Korea（4）
关键词 WIDE BAND GAP SEMICONDUCTOR（10）
出版物 APPLIED PHYSICS LETTERS（10）
出版时间 2010（3） 2011（3） 2012（2）
机构
作者 KIM H（2）

A switch for epitaxial graphene electronics: Utilizing the silicon carbide substrate as transistor channel

APPLIED PHYSICS LETTERS

KRACH F, HERTEL S, WALDMANN D, JOBST J, KRIEGER M, RESHANOV S, SCHONER A, WEBER HB

Horizontally aligned ZnO nanowire transistors using patterned graphene thin films

APPLIED PHYSICS LETTERS

KIM H, PARK JH, SUH M, AHN JR, JU S

Large-area transparent conductive few-layer graphene electrode in GaN-based ultra-violet light-emitting diodes

APPLIED PHYSICS LETTERS

KIM BJ, LEE C, JUNG Y, BAIK KH, MASTRO MA, HITE JK, EDDY CR, KIM J

In-plane and tunneling pressure sensors based on graphene/hexagonal boron nitride heterostructures

APPLIED PHYSICS LETTERS

XU Y, GUO ZD, CHEN HB, YUAN Y, LOU JC, LIN X, GAO HY, CHEN HS, YU B

Graphene network on indium tin oxide nanodot nodes for transparent and current spreading electrode in InGaN/GaN light emitting diode

APPLIED PHYSICS LETTERS

SEO TH, LEE KJ, OH TS, LEE YS, JEONG H, PARK AH, KIM H, CHOI YR, SUH EK, CUONG TV, PHAM VH, CHUNG JS, KIM EJ

Identifying and characterizing epitaxial graphene domains on partially graphitized SiC(0001) surfaces using scanning probe microscopy

APPLIED PHYSICS LETTERS

KELLAR JA, ALABOSON JMP, WANG QH, HERSAM MC

Model of tunneling transistors based on graphene on SiC

APPLIED PHYSICS LETTERS

MICHETTI P, CHELI M, IANNACCONE G

Measurements of the sheet resistance and conductivity of thin epitaxial graphene and SiC films

APPLIED PHYSICS LETTERS

KRUPKA J, STRUPINSKI W

Vertically aligned ZnO nanostructures grown on graphene layers

APPLIED PHYSICS LETTERS

KIM YJ, LEE JH, YI GC

Early stage formation of graphene on the C face of 6H-SiC

APPLIED PHYSICS LETTERS

CAMARA N, RIUS G, HUNTZINGER JR, TIBERJ A, MAGAUD L, MESTRES N, GODIGNON P, CAMASSEL J