国家/地区 美国（10） 韩国（8） 中国（6） 日本（2）
IPC部 B（8） H（7） C（6）
IPC大类 B82（7） H01（7） B32（3）
C01（3） C08（3） C23（2）
IPC小类 H01L（7） B82Y（6） B32B（3）
C01B（3） C08L（2） C23C（2）
H01B（2）
IPC B82Y099/00（5） H01L029/78（5） B82Y040/00（4）
H01L021/336（4） H01L029/10（3） C01B031/02（2）
C08L063/00（2） H01B001/04（2） H01L021/20（2）
H01L029/06（2） H01L029/12（2） H01L029/786（2）
H01L051/05（2） H01L051/30（2）
发明人 LEE S（12）
公开年 2012（12）
申请年 2011（12）
专利权人 SAMSUNG ELEC.（7） SNU R DB FOU.（2） UNIV GUILIN .（2） UNIV SEOUL N.（2）

Adhesive useful for bonding aluminum-polyurethane composite material, comprises graphene oxide comprising epoxy, hydroxy or carboxylic acid group, and alkoxysilane compound comprising amine, epoxy, carboxylic acid, hydroxy or thiol group.

CHO H C, LEE S H, LEE D S, KANG K H, CHEOL C H, HUN L S, SU L D, HO G G, KANG K, LEE D, LEE S, CHO H

Graphene electronic device e.g. back gate FET, has graphene channel layer extending between metals, and source electrode and drain electrode provided on edges of channel layer and formed to have thickness of specific range.

HEO J, CHUNG H, SEO S, LEE S, YANG H, HEO J S, CHUNG H J, SEO S A, LEE S H, YANG H J, JEONG H J, HUH J, JUNG H

Active optical device i.e. polymer-dispersed liquid crystal, for use in two-dimensional and three-dimensional images display apparatus, has liquid crystal layer arranged between graphene layer and transparent electrode layer.

KIM U, KIM S, LEE S, KIM U J, KIM S I, LEE S J

Graphene electronic device e.g. FET has source electrode and drain electrode that are connected to both edges of multiple graphene channel layers.

CHUNG H, LEE J, SHIN H, SEO S, LEE S, HEO J, YANG H, CHUNG H J, LEE J H, SHIN H C, SEO S A, LEE S H, HEO J S, YANG H J, SHIN J, HUH J, JUNG H

Grafting terminal amino hyper-branched polymer with graphene oxide modified epoxy resin, by adding water and distilled water to graphite oxide, adding triethylene tetramine, and slowly adding methanol to reacting solution.

GUO D, LEE S, LIU K, LU S, LUO C, XU X

Graphene substrate comprises a substrate, metal oxide film on the substrate, and graphene layer on metal oxide film in which the concentration of oxygen in metal oxide film is gradually reduced from the substrate towards the graphene layer.

CHUNG H, SEO S, LEE S, HEO J, YANG H, CHUNG H J, SEO S A, LEE S H, HEO J S, YANG H J

Graphene electronic device e.g. field effect transistors, has graphene channel layer which is formed on gate insulating layer and source and drain electrodes are located on graphene channel layer.

HEO J, SEO S, LEE S, CHUNG H, YANG H, SEO S A, JUNG H, HUH J, HEO J S, LEE S H, CHUNG H J, YANG H J

Semiconductor device comprises gate electrode on substrate, gate insulating layer, interlayer dielectric layer, graphene layer, and source and drain on graphene layer.

CHUNG H, LEE J, SHIN H, SEO S, LEE S, HEO J, YANG H, CHUNG H J, LEE J H, SHIN H C, SEO S A, LEE S H, HEO J S, YANG H J

Preparation of graphene oxide graft polyhedral oligomeric silsesquioxane modified epoxy resin by adding graphite oxide to water, ultrasonically dispersing, adding to epoxy resin substrate, adding sulfone curing agent, and molding.

GUO D, LEE S, LIU K, LU S, LUO C

Fabrication method for AA stacked graphene-diamond hybrid material involves maintaining diamond matrix at temperature having stable graphene phase in hydrogen gas atmosphere, and converting diamond surface into graphene in certain thickness.

LEE J, LEE S, AHN J, LEE W