国家/地区 韩国（27） 美国（21） 中国（9） 日本（6） 欧洲专利局（EPO）（3） 世界知识产权组织（2）
IPC部 H（26） B（15） C（9）
G（6）
IPC大类 H01（26） B82（11） C01（8）
B32（5） C23（3） G01（3）
G02（3） B01（2） B05（2）
H05（2）
IPC小类 H01L（25） B82Y（11） C01B（8）
B32B（5） H01B（4） C23C（3）
B01J（2） B05D（2） G02F（2）
H05B（2）
IPC H01L021/336（9） H01L029/786（9） H01L029/78（7）
B82Y040/00（5） B82Y099/00（5） C01B031/02（5）
H01L029/16（5） B82Y030/00（4） H01L051/30（4）
B32B009/04（3） H01L021/28（3） H01L029/417（3）
H01L029/66（3） H01L029/772（3） H01L029/778（3）
发明人 LEE J（5） CHOI J（4） CHOI J Y（4）
LEE C（4） LEE C S（4） LEE J H（4）
CHUNG H（3） CHUNG H J（3） HEO J（3）
HEO J S（3） JUNG H（3） KIM Y S（3）
LEE Y（3） LEE Y H（3） PARK S（3）
公开年 2013（28）
申请年 2012（28）
专利权人 SAMSUNG ELECTRONICS CO LTD（28）

Graphene transfer method involves forming graphene on substrate, coating mixture containing polystyrene and solvent on the graphene, forming protective layer, and removing substrate and protective layer.

KIM U J, HUR J H, KIM J E, ROH Y G, PARK Y S, LEE C W, LEE J S, CHEON S M

Interconnect structure for integrated microelectronic circuit, has graphene cap which is provided with edges that are vertically coincident with edges of copper structure.

BONILLA G, DIMITRAKOPOULOS C D, GRILL A, HANNON J B, LIN Q, NEUMAYER D A, OIDA S, OTT J A, PFEIFFER D, DIMITRAKOPOULOS C, HANNON J, NEUMAYER D, OTT J, DIMITRAKO P C D, GREER A

Solar cell, has front electrodes arranged on front surface of photovoltaic layer, where transparent subsidiary electrode is placed on front surface of photovoltaic layer and front surface of front electrodes, and made of graphene.

CHANG J, SUH M, HEO J, CHANG J E, SUH M G, HEO J S

System, used to prevent corrosion of metals e.g. lithium, comprises a graphene layer formed on a metallic layer, where the metallic layer including a first metal and a second metal that are dipped in a metal solution.

CHAE S J, CHOI J Y, FETHULLAH G, LEE Y H, SHIN H J, YAO F

Semiconductor light emitting device e.g. LED has transparent electrode which is made of graphene layer and contact layer, and active layer which is formed between n-type and p-type nitride semiconductor layers.

SHIM H W, KIM Y S, KIM S T

Nanogap sensor used in device to detect biomolecule in sample, comprises micropore layer comprising micropore, graphene sheet disposed on layer and comprising nanoelectrode region, and first and second electrodes disposed on graphene sheet.

SHIM J, JEON T, EOM K, LEE D, JEONG H, CHO S, SHIM J Y, JEON T H, EOM K S, LEE D H, JEONG H J, CHO S H

Making graphene semiconductor device/diode used in organic light emitting display, comprises forming transfer substrate on semiconductor layer, forming laminates to separate sacrificial substrate from layer, and removing transfer substrate.

LEE C S, KIM Y B, YUN Y J, KIM Y S, SEO D, LEE J H, KIM Y, LEE J, LEE C

Producing reduced graphene oxide to produce graphene sheet, comprises forming cathode on conductive substrate, dipping cathode in electrolyte containing anode with base and applying voltage to cathode and anode.

JANG H Y, PARK S H, YU S H

Light emitting device for generating light of multiple colors, has graphene layer that is formed on light-transmissive sealing unit and is extended on conductive region, and wavelength converter is formed on side of light emitting device.

KIM J H

Logic device e.g. exclusive OR has light valve layer which is equipped with graphene layer and formed in opposite direction to gate electrode of the graphene transistor.

LEE D Y, LEE S J, RA C H, YOO W J