国家/地区 美国（16） 世界知识产权组织（9） 韩国（8） 日本（7） 中国（6） 欧洲专利局（EPO）（6） 台湾（4）
IPC部 C（17）
IPC大类 H01（17） C01（11） B82（8）
C08（5） C23（5） C07（4）
H05（2）
IPC小类 H01L（17） C01B（11） B82Y（8）
C23C（5） C07C（4） C08G（4）
B82B（2） C07D（2） C08K（2）
H01B（2） H01G（2） H05B（2）
IPC H01L051/00（17）
发明人 MILLEN K（2） MUELLEN K（2） YAMAZAKI Y（2）
公开年 2014（12） 2013（4）
申请年 2013（17）
专利权人 BASF CHINA C.（2） BASF SE（2） MAX PLANCK G.（2） TOSHIBA KK（2）

Use of amine precursor or its ammonium salt for depositing graphene film on substrate by chemical vapor deposition (CVD).

SCHWAB M G, MUELLEN K, SACHDEV H, ITO Y, SCHWAB M G S, MILLEN K

Organic-semiconductor film used for channel in transistor structure, has pseudo graphene structure including two-dimensional network structure which is formed continuously.

KAGAYA M, MATSUMOTO T, KATO D, KATO T

Synthesizing graphene nanoribbon used in e.g. field effect transistor or bipolar junction transistor, comprises polycyclization of linearly conjugated aryl compounds to provide graphene nanoribbon precursor.

KLEIN J P

Graphene composite layer for electrode for electronic device, has graphene layer and coating layer containing amine-based compound formed on surface(s) of graphene layer.

CHANG K G, JUN S H, YEONG K S, YONG P G

Deposition mask for forming patterned deposition material of e.g. organic light emitting display device, has carbon layer formed on surfaces of body portion and including carbon graphene, where openings are penetrated through surfaces.

HAN J

Transparent electrode for device comprises graphene sheet on substrate, interlayer consisting of conductive polymer disposed over the graphene sheet, and semiconducting nanowires disposed over the interlayer.

PARK H, CHANG S, KONG J, GRADECAK S, GRADEAOEAK S, ZHANG S

New oligophenylene monomer useful in polymeric precursor for preparing graphene nanoribbons that used are in thin film semiconductor of electronic, optical, or optoelectronic device e.g. organic field effect transistor device.

MUELLEN K, FENG X, CAI J, RUFFIEUX P, FASEL R, NARITA A, TSAI J, MULLEN K, MILLEN K

Fabricating graphene film for forming graphene based device e.g. dielectric capacitor, by heating substrate at specific temperature in chamber, introducing carbon source into the chamber and cooling substrate to room temperature.

OZKAN C S, OZKAN M, GUVENC A B, PAUL R K, LIN J, GHAZINEJAD M, PENCHEV M, GUO S, ZHONG J, HAYASHI K

Composition, useful to manufacture film used in transmissive electrode for organic electronic device, comprises, in solvent preparation, non-tubular graphene material, electrically conductive polymer including polythiophenes, and additive.

VIVILLE P, SOLOUKHIN V, KHOUSAKOUN E, DELIGNE N, COPPEE S, GRIVEI E, LAZZARONI R

Semiconductor device e.g. large scale integration (LSI) has graphene on catalyst metal film and carbon nano-tubes which penetrates contact hole on catalyst metal particles.

KATAGIRI M, YAMAZAKI Y, SAKAI T, SAKUMA N, SUZUKI M, SAKUMA H