国家/地区 中国（13）
IPC部 C（8） H（5） B（2）
G（2）
IPC大类 C01（7） H01（5） B82（2）
G01（2）
IPC小类 C01B（7） H01L（5） B82Y（2）
G01N（2）
IPC C01B031/04（7） H01L021/336（4） B82Y040/00（2）
H01L021/28（2）
发明人 XIE X（8） JIANG M（6） CHEN J（4）
DING G（4） WANG H（4） WU T（4）
XIE H（4） ZHANG X（4） ZHANG Y（4）
CHEN Z（3） HE P（3） LI X（3）
SUI Y（3） SUN Q（3） YU G（3）
公开年 2014（13）
申请年 2014（13）
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（13）

Manufacture of graphene flash memory involves patterning conductive layer formed on semiconductor substrate, forming source/drain electrodes, dielectric layers, graphene layer and gate electrode, and etching dielectric layers.

WANG H, JIANG M, LI L, XIE X, WU T, CHEN J, LU G, XIE H, ZHANG X

Preparation of single-crystal graphene domain involves performing chemical vapor deposition on specific-plane of semiconductor material as catalytic substrate using gaseous or solid carbon.

DI Z, WANG G, XUE Z, ZHANG M, ZHENG X, DAI J, WANG Z

Preparing graphene oxide quantum dots comprises adding citric acid to concentrated sulfuric acid, and carrying out reaction to form quantum dot graphene oxide solution.

XIE X, DING G, JIANG M, HE P

Wet etching chemical transfer method, useful for improving surface cleanliness of graphene, comprises depositing metal layer on metal-catalyzed substrate and graphene, and coating polymethylmethacrylate organic colloid on metal layer.

SUI Y, ZHANG H, ZHANG Y, YU G, CHEN Z, LI X, ZHU B, TANG C

Multi-gate graphene FET structure for use in bio-logical medical field, has graphite micro-belt located in etching groove, upper insulation layer is formed with nanometer hole, and semiconductor layer arranged with releasing window.

CHEN Y, LIU L, LI T, MA J, NI Z, SHA J, YI H, YUAN Z, ZHANG Y

Method for preparing flexible substrate of graphene device, involves performing low temperature deposition process to form grid medium layer and performing etching process on gate medium layer.

WANG H, JIANG M, XIE X, WU T, CHEN J, SUN Q, XIE H, ZHANG X

Graphene contact resistance reducing method, involves forming source and drain electrode area on surface of thin film, forming hole in drain metal electrode, forming grid medium layer on film, and fixing gate with grid medium layer.

WANG H, JIANG M, XIE X, WU T, CHEN J, LU G, SUN Q, XIE H, ZHANG X

Preparing graphene aqueous solution comprises mixing graphene powder and graphene quantum point and water mixture to obtain graphene suspension, and mechanically dispersing the suspension.

XIE X, JIANG M, TIAN S, DING G, HE P, SUN J

Preparation of graphene comprises dispersing natural graphite in polar solvent to obtain graphene quantum dots in polar solution, and mechanical stripping.

XIE X, JIANG M, TIAN S, DING G, HE P, SUN J

Continuous graphene film distinguishing method, involves coating organic colloid layer on metal catalytic substrate, where organic colloid layer and graphene film combination are placed in deionized water, and obtaining graphene film.

CHEN Z, LI X, SUI Y, WANG B, ZHANG H, ZHANG Y, YU G, ZHU B, TANG C