国家/地区 美国（7） 日本（4） 中国（3） 韩国（3） 世界知识产权组织（3）
IPC部 C（9）
IPC大类 C01（9）
IPC小类 C01B（9） C23C（9） H01B（6）
H01L（3） B32B（2） B82Y（2）
C09D（2）
IPC C01B031/02（9）
发明人
公开年 2015（6） 2014（2）
申请年 2014（9）
专利权人

Manufacturing method of graphene laminated structure, involves setting film thickness of iron carbide film more than thickness of boron nitride layer.

OSHIMA H

Manufacture of graphene film used for e.g. semiconductor, involves arranging substrate, providing metallic catalytic material and reducing gas, raising temperature, providing carbon-containing gas, and generating carbon atoms.

YEN W, CHUEH Y, YEN W C, CHUEH Y L

Manufacturing method of graphene film used in e.g. electronic device, photo-electronic device involves growing nano graphenes on insulating substrate by pyrolyzing carbon source included in reactive gas, without using metal catalyst.

SONG Y W, PARK J H

Synthesizing reduced graphene oxide on a substrate from seedlac, comprises preparing the seedlac solution in alcohol having specified carbons, dipping the substrate into the solution, and heating the substrate which is a metallic sheet.

SHYAM K C, MANISH K B, TAPAN K R, SUMITESH D, RANJAN K S, YASHABANTA N S, ASHIT K P, VIKAS C S, CHOUDHARY S K, BHADU M K, ROUT T K, DAS S, SAHU R K, SINGHBABU Y N, PRAMANICK A K, SRIVASTAVA V C

Usage of cellulosic polymer for preparing graphene ink composition for forming composite, involves concentrating exfoliated graphene by contacting exfoliated graphene medium with aqueous medium in graphene and cellulosic polymer.

HERSAM M C, LIANG Y T, SECOR E B, PRABHUMIRASHI P L, PUNTAMBEKAR K P, GEIER M L

Composition, used in a phase change material which is useful e.g. as thermal conductivity substrate for flexible graphene electronic devices, as electrode in battery, and in a thermal storage device, comprises galactitol and mannitol.

DA SILVA A K, FLEMING E, SHI L, BIELAWSKI C W, RUOFF R S, WEN S, JI H, PETTES M, PAUL A, PAEK E, PAK A J, SELLAN D P, FLAMING E, DA SILVAA A K

Manufacturing method for graphene transparent conductive film involves making graphene grow on base-material surface by performing plasma processing using hydrogen gas in bottom of pressure reduction in heated state.

HASEGAWA M, KATO R, TSUGAWA K, ISHIHARA M, OKIKAWA Y, YAMADA T

Manufacture of graphene as base material for electronic circuits, carbon-based electronic device and electromagnetic device, involves forming metal layer on thermal expansion compensation substrate, and forming graphene on metal layer.

CHOI M, KIM T, MOON J, JUNG M, KIM T H

Method for forming graphite-based structure used for e.g. electronic devices, involves patterning substrate, forming elements on substrate, depositing graphene initiating layer on top surface of each element, and generating graphene.

DAVIS M A