国家/地区 中国（10） 美国（10） 世界知识产权组织（9） 韩国（8） 日本（2）
IPC部 C（18）
IPC大类 C01（18）
IPC小类 C01B（18）
IPC C01B031/04（18） C23C016/26（12） C01B031/02（6）
C01B032/186（4） C23C016/02（4） C23C016/44（3）
H01B013/00（3） B82B003/00（2） C23C016/06（2）
C23C016/18（2） C23C016/56（2） H01B001/04（2）
H01L021/20（2） H01L029/16（2） H01L029/66（2）
发明人 CHOI M（2） JEONG S（2） JUNG M（2）
LEE J（2） MOON J（2） PARK I K（2）
PARK J H（2） PARK S（2） ROH Y（2）
SHI Y（2） WANG W（2） YEON S（2）
公开年 2014（18）
申请年 2014（18）
专利权人 LG ELECTRONI.（2） SHI Y（2） UNIV SUNGKYU.（2） WUXI GEFEI E.（2）
WUXI GRAPHEN.（2）

Manufacture of graphene for electric component, involves forming metal catalytic layer on substrate, introducing cover material on catalytic layer, and growing graphene on catalytic layer by carrying out chemical vapor deposition.

CHO K, BONG H, CHO K W

Manufacture of graphene as base material for electronic circuits, carbon-based electronic device and electromagnetic device, involves forming metal layer on thermal expansion compensation substrate, and forming graphene on metal layer.

CHOI M, KIM T, MOON J, JUNG M, KIM T H

Graphene pattern formation method involves forming DNA pattern, and forming graphene pattern on DNA pattern.

JEONG S, LEE J, PARK I K, PARK J H, PARK S, ROH Y, YEON S

Patterning a graphene in the manufacturing of semiconductor chip, by forming a DNA pattern and forming graphene on pattern, where pattern is formed by forming metal ion pattern on a substrate and adsorbing a DNA structure on ion pattern.

JEONG S, LEE J, PARK I K, PARK J H, PARK S, ROH Y, YEON S

Production of graphene for wiring film of three-dimensional stacked memory, involves decomposing carbon-containing gas with low reactivity in space which opposes substrate, and decomposing carbon-containing gas with high reactivity.

KAGAYA M, MATSUMOTO T, NISHIDE D

Apparatus for manufacturing graphene comprises a first chamber for supplying a carbon source under a first condition, a second chamber for supplying a carbon source, and a feeder for continuously supplying a catalyst metal.

MOON J, CHOI M, JUNG M

Graphene ball conductive adhesive preparation by preparing polymer microsphere using monomer mixture, performing chemical vapor deposition to grow graphene on microsphere surface, and dispersing graphene ball into epoxy resin glue system.

CHEN Y, LI J, LI Y, ZHANG X, LEE Y

Preparing graphene structure of 1-5 layers or controlling number of layers, involves introducing common substrate or substrate with powdered metal or substrate with definite pattern of metal inside reactor for chemical vapor deposition.

BERTRAN SERRA E, FREIRE SOLER V M, RAMIREZ SANCHEZ A, PASCUAL MIRALLES E, ANDUJAR BELLA J L

Graphene growth substrate composite etching liquid comprises surfactant, defoamer and cosolvent.

WANG W

Method for growing graphene layer on metal foil for e.g. forming field-effect transistor, involves positioning foil in vessel placed in chamber, introducing hydrogen, annealing foil, introducing methane and depositing carbon on foil.

ZHOU C, ZHANG Y, ZHANG L