国家/地区 中国（12） 韩国（6） 美国（5） 澳大利亚（2） 欧洲专利局（EPO）（2） 新加坡（2） 世界知识产权组织（2）
IPC部 C（17） H（9） B（3）
IPC大类 C23（17） H01（8） C01（5）
C09（3） B01（2） B82（2）
IPC小类 C23C（17） H01L（6） C01B（5）
C09D（3） B01J（2） B82Y（2）
H01M（2）
IPC C23C016/44（17）
发明人 HWANG J H（3） JEON M H（3） HO C H（2）
MA X（2） YOO Y Z（2） ZHANG Y（2）
公开年 2017（17）
申请年 2016（17）
专利权人 UNIV INJE IN.（3） WUHU SANGLEJ.（2）

Chemical vapor deposition apparatus for preparing thin film materials e.g. graphene, has main chamber that is for preparation of film material, and subchamber is for scouring of boron source.

DONG G, ZHANG X, TANG Q

Graphene-based laminate used in e.g. organic light emitting device, transistors, comprises substrate, graphene layer on substrate, and inorganic layer comprising fluorine-containing lithium compound, formed on graphene layer.

PARK C, CHO S, SEO S, SHIN S, PARK C H, CHO S M, SEO S A, SHIN S M

Thermally conductive electromagnetic wave shielding paint useful for semiconductor device, comprises copper powder, nickel coated on surface of copper powder, and graphene composite provided on surface of nickel.

JEON M H, HO C H, YOO Y Z, HWANG J H

Paint useful as thermal conduction electromagnetic interference shield coating for semiconductor device, comprises nickel coated on surface of copper powder, carbon nanotubes grown on nickel surface and graphene synthesized on copper powder.

JEON M H, HO C H, YOO Y Z, HWANG J H

Thermally conductive electromagnetic shielding paint useful for semiconductor device, comprises copper and graphene, where graphene synthesized on surface of the copper powder.

JEON M H, CHOI H G, HWANG J H, PARK M J

Forming device of graphene, has fixed frame that is connected with outlet pipes through cooling layer which is connected to cooling controller through cooling connection channel.

TANG J, XU Z

Preparation of gallium nitride nanostructure array, involves covering monolayer or multilayer graphene film, after cleaning substrate, placing substrate coated with graphene film in chemical vapor deposition tube furnace growth system.

XIU X, CHEN L, CHEN D, LI Y, HUA X, XIE Z, ZHANG R, HAN P, LU H, GU S, SHI Y, ZHENG Y

Growth method of transition metal chalcogenide two-dimensional material-graphene heterostructure used in microelectronic device, involves heating substrate, dissolving carbon source on surface of substrate and heating source materials.

YU G, WU T, XIE X, SHI Z, CHEN J, ZHANG Y, SUI Y, CHEN Z

Method of growing graphene for use in e.g. biomedical applications, involves introducing reaction gas containing oxygen-containing carbon source into furnace, heating, UV-irradiating reaction gas and depositing graphene film on substrate.

CHIU J, YEH C, CHIU P, QIU B, QIU R, YE Z

Method for preparing monolayer graphene encapsulated copper nano particles involves forming single layer graphene encapsulated copper nanoparticles on surface of conductive substrate by chemical vapor deposition method.

HUANG L, ZHANG Y