国家/地区 中国（10）
IPC部 H（10） C（6）
IPC大类 H01（10） C07（4）
IPC小类 H01L（10） C07C（4） C07D（2）
IPC H01L051/05（10）
发明人 GUO X（4） JIA C（4） LI P（3）
CHANG X（2） JIANG H（2）
公开年 2022（6） 2021（4）
申请年 2021（10）
专利权人 UNIV NANKAI（4） BEIJING WEIM.（2） UNIV PEKING（2）

New raphene nano-segment molecule containing azulene unit-azulene and rubicene compound i.e. azuleno(5,6,7,8,1-uvwxa)cyclohepta(ijkl)rubicene compound useful in near-infrared absorption photodetection, and field-effect transistors, organic solar cells, organic light-emitting diodes.

LI C, ZHANG G, ZHANG X, QIN L, ZHANG D

New diamine compound with quantum interference effect, used in preparation of single-molecule field effect transistor.

CHANG X, WANG B, JIA C, LI P, GUO X

Light-controlled graphene-modulated, heterogeneity transistor for manufacturing infrared sensor, comprises gate electrode, insulating layer, graphene nano-band array, source electrode, drain electrode and organic semiconductor layer.

YU X, LIU Z, YAO Z, LI J

New plane conjugated molecular compound used in single-molecule field-effect transistor comprising graphene gate electrode layer, bismuth selenite dielectric bottom layer, and hexagonal boron nitride dielectric top layer.

CHANG X, JIA C, ZHANG M, LI P, GUO X

Polymer-based semiconductor fiber i.e. conjugated semiconductor polymer whose fiber surface and interior has pore structure and orientation structure.

WANG H, FENG L, JIANG H, WANG G

Preparation of resistance change memory in semiconductor field, involves adding cadmium sulfate and oxalic acid into N, N-dimethyl formamide, adding polymer polyvinyl alcohol, polymethyl methacrylate and polystyrene, and spin coating.

ZHENG W

Method for forming fin-type field effect transistor device, involves forming convex dielectric fin over substrate, forming channel layer on upper surface of dielectric fin along wall of dielectric fin, and forming channel enhancement layer.

HUNG Y, ZHENG Z, CHEN Z, JIANG H, LI L, CHIANG H, CHEN T, CHENG C, HONGITISE, CENTISEAN, RELANEBELL

Preparing graphene-carbon nanotube heterojunction comprises e.g. processing growth substrate, mechanically stripping graphene on substrate, loading catalyst on growth substrate with graphene, growing single-wall carbon nano tube and cooling.

HU Y, ZHANG H, QIAN J, HUANG S

New azulene derivative used in preparation of single-molecule heterojunction or single-molecule field effect transistors.

FU H, GUO X, JIA C

New pyridinium based supramolecular compound useful in preparing supramolecular-graphene heterojunction molecule composition for single molecule field effect transistor.

ZHU X, GUO X, JIA C, LI P