国家/地区 中国（240） 世界知识产权组织（42） 美国（38） 澳大利亚（19） 欧洲专利局（EPO）（16） 印度（14） 日本（14） 韩国（14） 俄罗斯（14） 台湾（13） 加拿大（6） 巴西（5） 西班牙（4） 法国（4） 德国（3） 波兰（2） 越南（2）
IPC部 B（334）
IPC大类 B82（334）
IPC小类 C01B（334）
IPC B82Y040/00（262） B82Y030/00（251） C01B032/184（112）
C01B032/194（95） H01M004/62（57） C01B032/198（45）
C01B032/19（39） H01M010/0525（36） B82Y020/00（32）
C09K011/65（30） C01B032/15（27） C01B032/182（26）
H01M004/38（26） C01B032/168（25） H01M004/36（24）
发明人 LI Y（16） LI X（14） LIU Y（11）
ZHANG X（11） LIU J（10） LIU X（10）
LI J（9） WANG H（8） WANG X（8）
WANG Y（8） WANG Z（8） CHEN J（7）
LI Z（7） LIU Z（7） ZHANG H（7）
公开年 2021（195） 2022（126） 2023（13）
申请年 2021（334）
专利权人 UNIV SHANGHA.（5） UNIV CHINA E.（4） UNIV JIANGSU（4） UNIV SHANXI（4）
UNIV SOUTHWE.（4） NINGBO INST .（3） PANDEY S（3） SAHOO N G（3）
SHANGHAI INS.（3） SHANGHAI NAT.（3） TIANJIN AIKE.（3） UNIV BEIJING.（3）
UNIV CHINA T.（3） UNIV GUANGDO.（3） UNIV KUNMING.（3） UNIV SHANDON.（3）
UNIV SOUTH C.（3） UNIV TONGJI（3） UNIV TSINGHU.（3） UNIV XIAMEN（3）

Preparation of graphene oxide quantum dots, involves dispersing potato paste in deionized water and adding ammonium hydroxide solution, treating formed mixture hydrothermally at preset conditions, and cooling to room temperature, filtering and drying.

KAUSHAL J, KAPOOR M, KUMAR P, KHANRA P, GAYTRI

Method for generating white light using white light-emitting quantum dots, involves mixing naphthalene and heteroatom co-doping compound, fabricating heteroatom co-doped graphene quantum dots from obtained mixture, and generating white light using obtained white-light emitting quantum dots.

SAGAR V K, BISHT P B

Preparing magnetically reduced graphene oxide-based composite material used in field of oil-water separation, involves providing graphene oxide material, mixing oxidized graphene material, trivalent iron salt, amine compound and dispersing solvent uniformly to form graphene dispersion.

SHEN L, WANG G, ZENG Z, XU Y

Manufacturing optical device by forming resist of predetermined shape on multilayer graphene, and processing multilayer graphene together with resist, removing resist covering, and providing electrode covering exposed inclined end face of multilayer graphene.

KONDO D, HAYASHI K, ASO H

Manufacture of high quality graphene used for forming e.g. supercapacitor, involves performing chemical reduction of exfoliated graphene oxide with antioxidant extract obtained from olive tree, filtering and washing product, and drying product.

GUILLEN FUERTE H, ANDRINAL LOPEZ D, ALONSO BAHLSEN I, MOMBIEDRO MANSO R, HOYOS NUNEZ M, SANCHEZ VALDEOLIVAS A

Production of composite of polypropylene, talc and nanoparticles used for e.g. automobile component, involves adding nanoparticles comprising graphene, polypropylene, and talc by extrusion in extrusion machine in which nanoparticles comprising graphene and talc are melted.

ROMAO VIANA O A, SANDRI E

Preparing mesoporous carbon nanomaterials useful in e.g. catalysis and sensing, comprises e.g. mixing solution containing carbon precursor with solution containing templating agent and pore-forming agent, obtaining mesoporous carbon precursor containing templating agent and carbonizing.

TIAN Q, JING L, LIU J

Stripping method of two-dimensional material, comprises uniformly mixing two-dimensional material with thermoplastic plastic to obtain mixture, heating and melting the mixture, where stripping system material is obtained by plastic processing technique.

WAN W, LI P, LIU S, LI W, ZHAO Z

Dispersion of single-walled carbon nanotube e.g. graphene nanotube, involves using bovine serum albumin in phosphate buffer solution and dulbecco's modified eagle medium and bronchial epithelial growth medium as culture media, and obtaining dispersions with preset agglomerate size.

ALPHA B, TIMERBULATOVA G A, DIMIEV A M, KHAMIDULLIN T L

Method of forming nano crystalline graphene, involves arranging substrate having pattern in reaction chamber, injecting reaction gas into reaction chamber, reaction gas including carbon source gas, inert gas, and hydrogen gas that are mixed, generating plasma of reaction gas in reaction chamber.

LEE C, JUNG A, SHIN H, SHIN K, SHIN K W, SHIN H J, JUNG A R, LEE C S