国家/地区 世界知识产权组织（11）
IPC部 C（11）
IPC大类 C30（11） H01（6） C01（4）
C23（4）
IPC小类 C30B（11）
IPC C30B025/18（3） C30B029/02（3） C30B029/36（3）
C23C016/02（2） C30B001/10（2） C30B023/02（2）
C30B029/68（2） H01L021/02（2）
发明人 MITSURU M（2） NORIYUKI M（2） TAKAYASU O（2）
TAKUJI M（2）
公开年 2022（6） 2021（3） 2023（2）
申请年 2021（11）
专利权人 ROHM CO LTD（2）

Growing graphene layer structure on substrate used in opto-electronic device, e.g., solar cell, solar cell, light-emitting diode, organic light-emitting diode, electro-optic modulator, photodetector or diode, involves providing substrate on susceptor in chemical vapor deposition reaction chamber.

THOMAS S, GUINEY I, DIXON S

Strain measurement sensor used for wearable device to measure biosignal or movement, comprises base layer formed of flexible material, and conductive thin film layer provided on surface of base layer and formed with cracks having at least one pattern of irregular straight lines or irregular curves.

KIM H J, RYU C H, KIM H, RYU C

P-type transparent conductor with highly reduced graphene oxide thin film, has substrate and highly reduced graphene oxide thin film deposited on the substrate, in which the film is directly grown on substrate by pulsed laser deposition.

RAO R M S, JUVAID M M, SARKAR S, VENKATESAN T

Substrate used for semiconductor module applications e.g. diode modules, comprises silicon carbide single crystal substrate, graphene layer, silicon carbide epitaxial growth layer, and polycrystalline layer, in order.

MAKOTO T, TAKUJI M, MITSURU M, NORIYUKI M, TAKAYASU O

Substrate for forming semiconductor device, comprises graphene layer arranged on silicon surface of silicon carbide crystal substrate, epitaxial growth layer, and graphene layer arranged on silicon surface of epitaxial growth layer.

NORIYUKI M, TAKUJI M, MITSURU M, TAKAYASU O

Forming dry electrode for measuring electrophysiological readings, by growing silicon carbide film on silicon substrate, depositing metals on surface of silicon carbide film, heating to react metal with silicon of silicon carbide film to form carbon and silicide and carbon forms graphene layer.

IZZO K A, AMJADI POUR M, FAISAL S N, LIN C, IACOPI F

Manufacture of expanded graphite for forming exfoliated graphene oxide, involves adding iron(III) salt to mixture containing potassium manganese oxide, graphite and sulfuric acid/phosphoric acid to form solid graphite-intercalated compound, separating obtained compound and heating.

CHEN A, SALVERDA M, THIRUPPATHI A R, SIDHUREDDY B, RAHMATI F

Producing single crystal metal layer used as a catalyst layer in a process of two-dimensional (2D) material growth by arranging metal source material and deposition substrate in a closely-spaced relationship, and heating under vacuum.

BURTON O J, HOFMANN S

Formation of two-dimensional silicon carbide used as wide band gap semiconducting material in electronic applications, involves preparing solution comprising silicon carbide particles and solvent, ultrasonically processing solution, and centrifuging to extract two-dimensional silicon carbide.

CHABI S

Fabricating single-crystalline ionically conductive materials for electrochemical cell by forming material on two-dimensional material over growth substrate and removing single-crystalline ionically conductive material from substrate.

KIM J, KONG W, BAE S, KONG L, KUM H, SHAOHORN Y, YU Y