国家/地区 中国（7）
IPC部 C（7）
IPC大类 C22（7）
IPC小类 C22F（7） C23C（6） C21D（2）
H01L（2）
IPC C22F001/08（7）
发明人 LI J（2） WANG X（2）
公开年 2022（5） 2023（2）
申请年 2022（7）
专利权人

Preparing copper-clad aluminum composite welding strip used in interconnection strip, bus belt comprises surface cleaning of copper strip and aluminum rod, wrapping, multiple drawing of composite copper rod, and ultrasonic testing, drawing composite copper wire, heat annealing and tin plating.

DONG W, ZHANG W, GAO L, CHEN Q

Preparing graphene-doped copper bonding wire comprises taking graphene oxide, mixing with mixed metal powder to obtain molten mixed powder, placing semi-finished product wire into aqueous solution of reducing agent for heating, annealing, washing and drying.

FENG Z, QU S, LIU B, WANG T, LIN L

Method for preparing metal-graphene composite material by using electronic component, involves preparing metal-graphene composite material by hot-pressing sintering, and applying pulse current to metal substrate to perform surface heat treatment to metal substrate.

WANG X, HUO Y, LI J, CAO Z, XIAO Z

Preparing copper-based graphene composite material comprises growing graphene film on surface of copper foil by chemical vapor deposition, stacking, using ultrasonic welding technology to weld stacked components, and removing stress and annealing welded stack assembly.

WANG E, WANG X, HE M, ZHANG R, ZHAO C, HU X, LIU K, FU Y

Method for improving multi-layer graphene coverage rate on copper-based alloy substrate comprises annealing copper base alloy substrate, introducing carbon source to graphene growth after annealing, realizing multi-layer graphene, quickly cooling to room temperature, ending growth.

CHEN Z, XIAO R, YU G, ZHANG Y

Preparing copper alloy semiconductor lead frame for circuit board, comprises heating copper alloy ingots, removing oxide, aging, adding copper alloy semi-finished product silver plating bath for silver-plated plating treatment, and activating.

CAO G, LI C, XU J, YIN H

Preparing single crystal graphite comprises e.g. placing metal foil in plasma device, introducing nitrogen-containing gas, starting plasma excitation source for plasma treatment, placing metal foil in reaction furnace, annealing, starting growth of graphene single crystal at growth temperature.

ZHAO M, LI G, WANG B, WEI W, XU X, GUO Y, LI J, JIAN X, QUE L, ZHOU Z