国家/地区 中国（16） 世界知识产权组织（4）
IPC部 C（9） H（5） B（2）
IPC大类 C01（8） H01（5） C23（4）
C30（2）
IPC小类 C01B（8） H01L（5） C23C（4）
C30B（2）
IPC C01B031/04（7） C23C016/26（4）
发明人 XIE X（13） DING G（11） DI Z（6）
JIANG M（6） WANG G（4） ZHANG M（4）
CHEN D（3） WANG H（3） ZHU Y（3）
GONG Q（2） SUN L（2） WANG S（2）
WU T（2）
公开年 2012（9） 2013（7）
申请年 2012（16）
专利权人 CHINESE ACAD SCI SHANGHAI MICROSYSTEM（16）

Method for controlling stability of ion based on energy of ion implantation for preparing graphene, involves annealing catalytic substrate to carbon ion implantation, so as to form graphene thin film layer on catalyst substrate surface.

CHEN D, DI Z, DING G, GUO Q, WANG G, XIE X, YE L, ZHANG M

Preparation of graphene nanopore array involves coating carbon solution on surface of porous anodic aluminum oxide template, pressing porous anodic aluminum oxide template on substrate surface, peeling template, and annealing metal base.

DING G, JIANG M, XIE X

Controllable industrial graphene metal nano-meter structure array preparation method, involves forming platform frame with groove, and reducing temperature of segregation carbon metal solid solution for complete graphene preparation process.

CHEN L, DI Z, WANG G, WANG X, WEI X, ZHANG M

Graphene preparation involves adding halobenzene in organic solvent in presence of catalyst to form graphene suspension, filtering suspension to obtain graphene oxide and catalyst, adding graphene oxide with acid, and filtering.

DING G, JIANG M, LI X, SUN J, WU T, XIE X

Graphene field effect device preparing method, involves forming source electrode and drain electrode in graphene field effect device structure, and connecting source electrode and drain electrode with graphene.

KANG X, LIU X, SUN Q, WANG H, XIE H, XIE X

Preparation of graphene involves providing semiconductor substrate, heating under hydrogen and inert atmosphere, adding carbon source to surface of substrate, by chemical vapor deposition method, and cooling.

CHEN D, DI Z, DING G, WANG G, XIE X, ZHANG M, ZHU Y

Manufacture of gate dielectric thin film on graphene surface involves introducing graphene into molecular beam epitaxy chamber kept at preset temperature and pressure, and passing metal vapor stream and oxidant gas stream.

SHEN D, WANG H, XIE X, YANG X, ZHANG Y

Preparation of graphene oxide/sulfide composite electrode material by dissolving graphite oxide with deionized water, ultrasonically peeling off, adding dimethylformamide, acid salt and water reducing agent, centrifuging, and drying.

DING G, DU F, JIANG M, XIE X

Controllable layer number graphene thin film, prepared by preparing germanium-silicon substrate, carburizing and heating copper-nickel composite substrate with carbon source gas.

DING G, JIANG M, XIE X, ZHU Y

Method of preparing double-gate MOSFET based graphene used in e.g. microelectronics field, involves forming back grid electrode over high-k gate thin film at back of substrate, after forming graphene at interface of substrate layers.

CHAI Z, CHEN J, LUO J, WU Q, YU T