国家/地区 日本（7） 台湾（2） 美国（2） 世界知识产权组织（2）
IPC部 H（7） C（4） B（3）
IPC大类 H01（7） C01（4） B82（3）
IPC小类 H01L（7） C01B（4） B82Y（3）
IPC C01B031/02（4） H01L021/28（4） H01L029/06（4）
H01L051/05（4） H01L051/30（4） B82Y030/00（3）
H01L021/3205（3） H01L021/768（3） H01L023/532（3）
H01L029/786（3） H01L051/40（3） B82Y040/00（2）
C01B032/15（2） C01B032/18（2） C01B032/182（2）
发明人 SATO M（3）
公开年 2014（3） 2015（3）
申请年 2013（7）
专利权人 FUJITSU LTD（7）

Carbon electrically conductive structure used in semiconductor device e.g. semiconductor memory, has first graphene whose edge is electrically connected with edge of second graphene.

SATO M

Manufacturing method of wiring structure for metal oxide semiconductor transistor of e.g. semiconductor memory used in electronic device, involves moving portion on catalyst material and film so as to remain graphene only in groove.

SATO M

Semiconductor device for use as field effect transistor, comprises graphene bilayers, which does not contain the doped impurities, multilayer carbon nanotubes, semiconductor elements and electrodes.

OFUCHI M

Semiconductor device has channel layer whose right edge is bonded with substrate and left edge is floated from substrate, and that is made of graphene by ether bond or ester bond.

JIPPO H

Electronic apparatus, particularly graphene transistor, comprises electrode electrically connected to graphene film, where graphene film has portion whose density of states is higher than another portion in connection portion with electrode.

HARADA N

Wiring structure used for semiconductor device e.g. large scale integration, comprises carbon nanotubes and graphene, which are connected electrically through metal block.

SATO S, KONDO D, SATO M, NIHEI M, KONDO T

Electronic apparatus e.g. transistor, has protective film consisting of transition metal oxide that is formed on graphene film which is formed on insulating substrate, and insulating layer formed on protective film with electrode.

YAMAGUCHI J