国家/地区 美国（7）
IPC部 H（6） B（5）
IPC大类 H01（6） B82（4）
IPC小类 H01L（5） B82Y（4）
IPC B82Y040/00（4） H01L029/06（3） H01L021/02（2）
H01L021/36（2） H01L023/52（2） H01L033/00（2）
H01L033/02（2） H01L033/12（2）
发明人 KIM S（7） KIM S H（3） AN S（2）
AN S J（2） LEE D（2） LEE D G（2）
公开年 2012（3） 2013（2）
申请年 2011（4） 
专利权人 KIM S（7）

Multi-functional semiconductor device i.e. FET, for electronic system in electronic industry, has active pattern comprising buffer pattern on substrate, and doped pattern including graphene injected with impurity.

CANTORO M, WU Z, BHUWALKA K, KIM S, MAEDA S

Thermoelectric structure for forming thermoelectric device for thermoelectric apparatus, comprises graphene layer, and thermoelectric component comprising thermoelectric film and quantum dot on thermoelectric film, on graphene layer.

LEE K, KIM S, HWANG S, LEE S, LEE Y, HWANG S W, KIM S I, KIM S W, LEE K H, LEE S M, LEE Y H

Manufacture of graphene oxide reduced material for forming electrode for silicon-based semiconductor, involves synthesizing graphite oxide flakes from graphite flakes and forming graphene oxide dispersion solution.

JEONG S, LEE G, HAN J, JEONG H, KIM S, HAN J T, JEONG H J, JEONG S Y, KIM S H, LEE G W

Graphene electrical wire, has metal core having shape of fiber, and graphene layer synthesized on outer surface of metal core by chemical vapor deposition and produced by exfoliation.

KIM K, KIM Y K, KIM S

Thin-film transistor substrate for liquid crystal displays comprises insulating substrate; passivation film with contact hole exposing portion of drain electrode; and pixel electrode formed of carbon composition of carbon nanotubes/graphene.

NING H L, JEONG C, PARK J, KIM S, CHO S, KIM Y, BYUN J, JEONG C O, PARK J Y, KIM S G, CHO S H, KIM Y H, BYUN J S

Compound semiconductor manufacturing method, involves forming graphene-derived material layer on selected substrate, and connecting compound semiconductor layer to graphene-derived material layer.

AN S J, LEE D G, KIM S H, AN S, LEE D, KIM S

Compound semiconductor device for light emitting device i.e. LED, has oxidation graphene layer provided with oxidation graphene sheets on part of surface of substrate, and buffer layer arranged between substrate and semiconductor layer.

AN S J, LEE D G, KIM S H, LEE D K, AN S, LEE D, KIM S