国家/地区 韩国（11）
IPC部 C（6） H（6） B（3）
IPC大类 C01（5） H01（5） B01（2）
C08（2）
IPC小类 C01B（5） B01J（2） C08K（2）
H01B（2） H01L（2）
IPC C01B031/04（3） B01J019/12（2） C01B031/02（2）
C08K003/04（2） H01B001/24（2） H01B005/00（2）
发明人 PARK M（11）
公开年 2021（3） 2013（2）
申请年 2012（2）  2019（2） 
专利权人 KOREA INST SCI TECHNOLOGY（11）

Metal-nanocarbon composite comprises a core made of a plate-shaped metal, and a shell mechanically and chemically coupled to the outer surface of the core particle by simultaneous treatment of mechanofusion and plasma.

PARK J H, PARK M, LEE D, KIM T A, JI S M, CHOE H, YOUJIWON

Composite for three-dimensional crumpled graphene structure of supercapacitor electrode for stably implementing high electrical conductivity, has three-dimensional crumpled graphene shell, which is coated on surface of core.

SON J G, LEESANGSOO, KIM T A, JUNG S J, KIM H, PARK J H, PARK M, JUNG S

Fiber composite, has metal layer formed on surface of conductive fiber bundle body, and conductive fiber strands whose surfaces are coated with metal layer, where surface of metal layer is coated with graphene.

BAE S K, PARK M, SU J, LEE S K, LEE D

Laminate has metallic foil of monocrystal and graphene layer formed on metallic foil of monocrystal.

HYUK P J, LEE S S, SON J G, PARK M, KIM H, BAE W K, LIM S H

Protection film useful for producing organic electronic device, comprises multiple plasma-treated graphene layers, and a non-plasma-treated pure graphene layer deposited on the plasma-treated graphene layer.

BAE S, KIM S J, KIM T W, LEE S H, KIM M J, LEE S K, SEO T H, PARK M

Non-volatile memory device consists of substrate, lower electrode, active layer containing metal oxide-graphene quantum dots and organic polymer material, and upper electrode, in order.

KIM T W, SON D I, BAE S, LEE S H, MOON B J, LEE D S, PARK M

Conducting compound for flexible electric component, has main portion that is comprised with polymer infiltrated within pore of reduction graphene oxide board structure.

KIM T A, LEE S S, PARK M, KIM H S, PYO J B, LIM S H, SON J G

Manufacture of doped graphene for manufacturing semiconductor, involves mixing graphite powder and acid solution, oxidizing, drying, impregnating graphite oxide solid to organic compound aqueous solution, microwave heating and reducing.

LEE S S, KIM H, PARK M, LIM S H, GON S J, KWANG H L, KIM T A

Manufacturing boron-doped reduced graphene, useful as semiconductor with p-type characteristics, comprises adding boron oxide to graphene oxide, removing solvent from resulting solution to obtain solid mixture, and heating the solid mixture.

KIM H, DA YOUNG Y, PARK M, LIM S H, GON S J, LEE S S

Thermal conductive material for electronic packaging, is made of thermal conductive hollow particles chosen from carbon nanotube, graphene, graphite nanosheet, aluminum nitride, boron nitride and aluminum oxide, in polymer resin.

LEE S S, KIM J K, LIM S H, PARK M, KIM H, SU L S, GYEONG K J, HO I S, SUK K H