国家/地区 韩国（15） 美国（3） 欧洲专利局（EPO）（2） 世界知识产权组织（2）
IPC部 C（11） B（7） H（6）
IPC大类 C01（11） H01（6） B01（5）
C23（3） B32（2）
IPC小类 C01B（11） H01L（6） B01J（5）
C23C（3） B32B（2）
IPC C01B031/02（10） B01J019/08（4） C01B031/04（3）
B01J019/18（2） C23C016/26（2） H01L031/18（2）
发明人 RHO J（15）
公开年 2013（8） 2014（4）
申请年 2012（8）  2013（4） 
专利权人 LG ELECTRONICS INC（15）

Photodiode comprises semiconductor substrate in photodetector device, insulating layer formed on semiconductor substrate, electrode formed on insulating layer, graphene on substrate, insulating layer, where insulating layer comprises gel.

SUNG J, RHO J, SUNG J W

Display device using semiconductor light emitting device, has graphene film that is provided with graphene layer having plate shape and structural defects, and diffusion preventing material filled in structural defect.

MOON J, RHO J

Manufacturing graphene sheet involves heating graphene oxide to obtain graphene oxide solution, processing graphene oxide solution, and then pressing the processed graphene oxide solution.

KIM Y, LEE S, RHO J

Thin film silicon solar cell manufacturing method, involves forming polycrystalline silicon on graphene by utilizing thin film structure, where amorphous silicon is heat-treated on graphene that is formed on metallic board.

RHO J, CHOI M, KIM T

Manufacturing method of silicon semiconductor element for organic LED, involves producing device structure using the polycrystalline silicon which is formed on graphene.

RHO J, CHOI M, KIM T

Manufacture of graphene involves forming graphene layer on catalyst metal layer, forming protective layer on graphene layer, positioning support layer on protective layer and then removing catalyst metal layer.

JUNG M, PARK W, RHO J, MOON J

Manufacture of graphene involves loading catalytic metal layer into chamber, applying tensile force to catalytic metal layer, supplying carbon source to chamber, applying tension, and forming graphene on catalytic metal layer.

MOON J, RHO J, PARK S, KIM T, HONG B, PARK W, JUNG M, KIM T H, ROH J

Device used for manufacture of graphene, has chamber having inlet portion, and exhaust portion, substrate positioned within chamber and heating unit.

PARK W, JUNG M, RHO J, SEO B, MOON J

Apparatus, useful for growing graphene that is used in display device, comprises substrate positioned within chamber, heating portion heating substrate, and supply unit supplying induced current to heating unit.

PARK W, JUNG M, RHO J, SEO B, MOON J

Manufacturing graphene used e.g. as base material for electronic circuits, by attaching support layer on graphene layer, removing catalyst metal layer, disposing substrate on graphene layer, and separating support layer from graphene layer.

MOON J, PARK W, JUNG M, RHO J, SEO B