国家/地区 美国（7） 中国（4） 世界知识产权组织（3）
IPC部 H（7）
IPC大类 H01（7）
IPC小类 H01L（7）
IPC H01L027/108（3） H01L029/786（3） H01L025/00（2）
H01L025/065（2） H01L027/11507（2） H01L029/423（2）
H01L029/78（2）
发明人 HILL R J（2） HWANG D K（2）
公开年 2021（4） 2022（3）
申请年 2020（7）
专利权人 MICRON TECHNOLOGY INC（7）

Apparatus for voltage equalization for pillars of memory array, comprises access line, conductive pillar having first end configured for coupling with access line, conductive pillar having second end opposite first end of conductive pillar, memory cell coupled between conductive pillar and word line.

FANTINI P, BEDESCHI F, VILLA C

Integrated assembly for use in semiconductor device, comprises conductive line, and conductive structure over conductive line, where annular structure extending through conductive structure, and comprises dielectric material.

SILLS S E, HILL R J, KAEDING J F, HWANG D K

Integrated assembly for semiconductor device, has upwardly-extending structure comprising first insulative material, two-dimensional material, first electrostatic-doping-material, second insulative material and conductive-gate-structure.

SANDHU G S, HILL R J, HWANG D K

Semiconductor device assembly with improved thermal performance, has thermally conductive material layer thermally conducting heat generated by semiconductor device laterally outward toward outer surfaces of encapsulant material.

QU X, CHUN H, QUAN X

Semiconductor assembly e.g. memory, for manufacturing smaller and faster devices with high density components for computers, has first device mounted overlapping second device i.e. memory device, and thermal-insulator interposer including cavity, where connector couples first and second devices.

YOO C H, FAY O R

Fabricating semiconductor device package, involves forming carbon-based material on sacrificial substrate, inverting sacrificial substrate, bonding sacrificial substrate to wafer comprising semiconductor device components, and removing sacrificial substrate to leave carbon-based material over wafer.

NAKANO E

Integrated assembly e.g. transistor, comprises semiconductor material having more doped region adjacent less doped region, and two-dimensional material between doped regions.

KARDA K M, MOULI C, LIU H