国家/地区 欧洲专利局（EPO）（10） 世界知识产权组织（9） 美国（8） 中国（3） 韩国（2）
IPC部 H（9） B（4） C（4）
G（4）
IPC大类 H01（8） G01（4） C01（3）
B01（2） B82（2） H04（2）
IPC小类 H01L（6） C01B（3） G01N（3）
B82Y（2） H01M（2）
IPC H01L029/16（4） H01L029/778（3） H01L029/786（3）
B82Y040/00（2） C01B031/04（2） G01N027/414（2）
H01L021/04（2） H01L021/683（2） H01L029/423（2）
H01L029/66（2） H01L031/0352（2）
发明人 VOUTILAINEN M（3） COLLI A（2） HAQUE S M（2）
KALLIOINEN S（2） WEI D（2） ZARRA S（2）
公开年 2016（6） 2017（4）
申请年 2015（11）
专利权人 NOKIA TECHNOLOGIES OY（11）

Apparatus e.g. electronic device, has reduced graphene oxide layers for collecting electrical charge induced in reduced graphene oxide layers by vibration of piezoelectric diaphragm in response to sound input wave in sound input mode.

VOUTILAINEN M K, KONONENKO O, VOUTILAINEN M

Apparatus within sensing device for sensing chemical analytes within sample, has graphene FET configured such that output provided by FET, in response to pulse of electromagnetic radiation, is dependent upon analyte within sample.

WHITE R, MALIK S, ALLEN M, BAILEY M J A, BAILEY M

Apparatus used e.g. to water split, comprises plasmonic resonators configured to undergo plasmonic resonance upon irradiation by electromagnetic radiation, and graphene oxide positioned within space and in electrical contact with resonators.

HARRIS N, ASTLEY M, WEI D

Apparatus for enabling transfer of e.g. graphene, in thin film transistor, has layer comprising first coefficient of thermal expansion, where first coefficient of thermal expansion is different to second coefficient of thermal expansion.

HAQUE S, BOWER C, COTTON D, HAQUE S M

Preparation of reduced graphene oxide or reduced graphene oxide derivative for ink involves reducing graphene oxide or graphene oxide derivative with a reducing agent at a pH below a given value.

ZARRA S

Apparatus for detecting carbon monoxide, has graphene-based sensor which is configured to detect carbon dioxide produced by oxidation cell.

VOUTILAINEN M

Apparatus e.g. battery, has charge collector, ionic layer comprising room temperature ionic fluid and solidifying material, graphene oxide provided on charge collector and conductive material spaced apart from charge collector.

WEI D, ZARRA S

Method for providing transistor i.e. graphene FET, involves providing graphene on side of wafer, attaching semiconductor layer to interface, and providing connection from graphene to interface to form transistor with electrode and graphene.

POHJONEN H, KALLIOINEN S, ROUVALA M A K, POHJONEN K, ROUVALA M

Apparatus for reading out quantum dot-graphene FET based imaging sensors for X-ray imaging application, has FET biased to back gate through output connector element connected to back gate such that holes are trapped in quantum dot.

VOUTILAINEN M, KALLIOINEN S

Apparatus for controlling doping in two dimensional materials such as graphene, has floating electrode that is arranged to control level of doping within channel of two dimensional material.

BORINI S, COLLI A