国家/地区 英国（12） 美国（5） 世界知识产权组织（5） 中国（2） 德国（2） 台湾（2）
IPC部 H（11） C（6） G（5）
IPC大类 H01（8） G01（5） C01（4）
C23（4） C30（2） H10（2）
IPC小类 H01L（8） C01B（4） C23C（4）
G01R（3） C30B（2） H10N（2）
IPC H01L021/02（5） H01L029/16（5） C01B032/186（3）
C23C016/26（3） G01R033/07（3） H01L021/336（3）
H01L043/06（3） H01L043/14（3） C23C016/02（2）
C23C016/455（2） C30B025/18（2） C30B029/02（2）
H01L021/04（2） H01L029/66（2） H10N052/00（2）
发明人 GUINEY I（7） THOMAS S（6） DIXON S（5）
GLASS H（4） BIDDULPH P D（3） BADCOCK T J（2）
GRIFFIN R M（2） KAINTH J（2） LEE L Y（2）
WALLIS R（2）
公开年 2022（9） 2023（2）
申请年 2021（12）
专利权人 PARAGRAF LTD（12）

Transducer for torque sensor of vehicle, has first graphene hall sensor assembly fixed between rotatable bar and first magnet, where first magnet generates first electrical potential in first graphene hall sensor assembly.

BIDDULPH P D

Growing graphene layer structure on substrate used in opto-electronic device, e.g., solar cell, solar cell, light-emitting diode, organic light-emitting diode, electro-optic modulator, photodetector or diode, involves providing substrate on susceptor in chemical vapor deposition reaction chamber.

THOMAS S, GUINEY I, DIXON S

Audio transducer, such as microphone, for use on spacecraft or on instruments for use on other planets or satellites, comprises first graphene sheet located within magnetic zone, where second graphene sheet has fixed position relative to first graphene sheet.

SCARROW B, LAMBERT A D, BIDDULPH P D

Forming a graphene layer structure used in Hall effect sensor, involves providing growth substrate having growth surface, and forming graphene layer structure on growth surface by chemical vapor deposition method, where growth surface is formed of material consisting of e.g. magnesium aluminate.

GRIFFIN R M, THOMAS S, GUINEY I, DIXON S

Wafer for CVD growth of uniform graphene at temperature in excess temperature, comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across insulating layer, where barrier layer is alumina and/or hafnium oxide layer.

JAGT R, KAINTH J, DIXON S

Manufacturing electronic device precursor e.g. organic LED, involves providing silicon wafer having growth surface, forming insulative layer on growth surface, forming graphene monolayer or multi-layer structure on insulative layer, forming further layers and/or electrical contacts.

BADCOCK T J, KAINTH J, DIXON S, GUINEY I, GRIFFIN R M

Graphene hall sensor for operation at cryogenic temperatures, comprises substrate, encapsulating layer formed on graphene sheet provided on substrate, dielectric layer or alumina layer provided on graphene sheet, where graphene sheet and dielectric layer share continuous outer edge surface.

LEE L Y, BAINES R, BIDDULPH P D, GLASS H

Forming material on graphene layer structure for use in electronic component for biosensing, involves providing graphene layer structure having first portions on non-metallic substrate, and plasma etching first portions of graphene layer structure to remove the out-of-plane material.

GUINEY I, THOMAS S, GLASS H, LEE L Y

Forming graphene on silicon substrate for electronic device, comprises providing silicon wafer having growth surface free of native oxides in reaction chamber, and nitriding growth surface with nitrogen-containing gas with wafer.

DIXON S, GUINEY I, THOMAS S, THOMAS S C S

Method for manufacturing graphene transistor, involves providing substrate having flat surface, where surface comprises insulating region and adjacent semiconducting region, and forming graphene layer structure on surface.

BADCOCK T J, WALLIS R, GUINEY I, THOMAS S