国家/地区 英国（16） 世界知识产权组织（8） 美国（5） 德国（3） 台湾（3）
IPC部 H（13） C（8） G（8）
IPC大类 H01（12） C01（6） C23（6）
G01（5） G02（3） C30（2）
IPC小类 H01L（12） C01B（6） C23C（6）
G01R（3） G02F（3） C30B（2）
IPC H01L029/16（7） C01B032/186（5） C23C016/26（5）
H01L021/02（5） C23C016/02（3） C23C016/455（3）
G01R033/07（3） G02F001/035（3） H01L021/336（3）
H01L029/66（3） H01L043/06（3） H01L043/14（3）
C01B032/182（2） C23C016/40（2） C30B025/18（2）
发明人 GUINEY I（12） DIXON S（8） THOMAS S（8）
BADCOCK T J（6） GLASS H（4） GRIFFIN R M（4）
BIDDULPH P D（3） KAINTH J（3） LEE L Y（3）
WALLIS R（3） BAINES R（2） GRIFFITHS J（2）
JAGT R（2）
公开年 2022（17）
申请年 2021（9）  2022（7） 
专利权人 PARAGRAF LTD（17）

Audio transducer, such as microphone, for use on spacecraft or on instruments for use on other planets or satellites, comprises first graphene sheet located within magnetic zone, where second graphene sheet has fixed position relative to first graphene sheet.

SCARROW B, LAMBERT A D, BIDDULPH P D

Manufacture of light-emitting device comprises forming graphene layer structure on non-metallic substrate, forming first layer of dielectric material on first surface portion of structure, and providing source contact and gate contact.

GUINEY I, GRIFFITHS J, DIXON S, THOMAS S, WALLIS R, GILLIN W P, FENWICK O, HUMPHREYS C J, WENG Z

Method for determining magnetic field with graphene Hall effect sensor, involves exposing graphene Hall effect sensor to magnetic field and measuring output voltage from second pair of contacts, and using graphene Hall effect sensor temperature and output voltage to determine magnetic field.

GLASS H F J, BIDDULPH P, BIDDULPH P D

Electro-optic modulator used to control power or amplitude, phase, frequency or polarization of light with electrical control signal, has substrate provided with channel of waveguide material, and insulative layer provided on upper surface.

BADCOCK T J, GUINEY I

Photodetector used in electro-optic modulator, comprises graphene layer arranged on first insulative layer comprising silicon nitride and/or oxide of one or more of aluminum, hafnium and magnesium.

BADCOCK T J, GUINEY I

Forming graphene layer structure, comprises providing growth substrate having growth surface, and forming graphene layer on growth surface by chemical vapor deposition, where growth surface is formed of material e.g. yttrium-stabilized zirconia.

DIXON S, GUINEY I, THOMAS S, GRIFFIN R M, BADCOCK T J

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Forming a graphene layer structure used in Hall effect sensor, involves providing growth substrate having growth surface, and forming graphene layer structure on growth surface by chemical vapor deposition method, where growth surface is formed of material consisting of e.g. magnesium aluminate.

GRIFFIN R M, THOMAS S, GUINEY I, DIXON S

Wafer for CVD growth of uniform graphene at temperature in excess temperature, comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across insulating layer, where barrier layer is alumina and/or hafnium oxide layer.

JAGT R, KAINTH J, DIXON S

Producing graphene useful for electronic devices comprises forming graphene on non-metallic surface of substrate by chemical vapor deposition in reaction chamber and adding precursor in gas phase and suspended in gas into reaction chamber.

DIXON S, GRIFFITHS J, GRIFFIN R M, GUINEY I, THOMAS S