国家/地区 韩国（56） 美国（35） 中国（12） 日本（7） 欧洲专利局（EPO）（6） 世界知识产权组织（2）
IPC部 H（53） B（26） C（21）
G（8）
IPC大类 H01（53） B82（19） C01（16）
B32（7） C23（7） G01（5）
B01（4） G02（3） H05（3）
B05（2）
IPC小类 H01L（50） B82Y（17） C01B（16）
B32B（7） C23C（7） H01B（7）
B01J（3） B82B（3） B05D（2）
G01J（2） G01N（2） G02F（2）
H05B（2）
IPC H01L021/336（14） H01L029/786（14） H01L029/78（13）
C01B031/02（12） B82Y040/00（9） B82Y099/00（9）
H01L029/16（9） H01L029/06（7） H01L029/66（7）
B82Y030/00（5） H01B001/04（5） H01L029/417（5）
H01L029/778（5） H01L051/30（5） B32B009/04（4）
发明人 CHOI J Y（12） HWANG S W（9） CHOI J（8）
CHUNG H（8） CHUNG H J（8） KO G W（8）
SIM S H（8） SONE C S（8） HEO J（7）
LEE C（7） LEE J（7） LEE J H（7）
SEO D（7） YOO W J（7） LEE C S（6）
公开年 2013（61）
申请年 2012（28）  2011（22）  2013（11） 
专利权人 SAMSUNG ELECTRONICS CO LTD（61）

Analyzing graphene, comprises generating second graphene structure by oxidizing first graphene structure including graphene having grains and grain boundaries, and support portion, and detecting shape of the graphene.

LEE Y, HAN G, DUONG D L, HAN G H, LEE Y H

Graphene transfer method involves forming graphene on substrate, coating mixture containing polystyrene and solvent on the graphene, forming protective layer, and removing substrate and protective layer.

KIM U J, HUR J H, KIM J E, ROH Y G, PARK Y S, LEE C W, LEE J S, CHEON S M

Graphene electronic device, useful as e.g. FET, comprises graphene channel layer formed on hydrophobic polymer, gate oxide covering channel layer exposed by source and drain electrodes, and gate electrode formed on portion of channel layer.

YANG H, SEO S, LEE S, CHUNG H, HEO J

Membrane, useful in gas separator for separating e.g. hydrogen and carbon dioxide for industrial use, comprises porous layered support, and gas separating active layer that is arranged on support and comprises functionalized graphene.

CHOI J, PARK H, YOON S, KIM H, AHN B, YOO B, YOON H, CHOI J Y, PARK H B, YOON S M, KIM H W, AHN B K, YOO B M, YOON H W

Interconnect structure for integrated microelectronic circuit, has graphene cap which is provided with edges that are vertically coincident with edges of copper structure.

BONILLA G, DIMITRAKOPOULOS C D, GRILL A, HANNON J B, LIN Q, NEUMAYER D A, OIDA S, OTT J A, PFEIFFER D, DIMITRAKOPOULOS C, HANNON J, NEUMAYER D, OTT J, DIMITRAKO P C D, GREER A

Solar cell, has front electrodes arranged on front surface of photovoltaic layer, where transparent subsidiary electrode is placed on front surface of photovoltaic layer and front surface of front electrodes, and made of graphene.

CHANG J, SUH M, HEO J, CHANG J E, SUH M G, HEO J S

Photodetector has graphene channel layer which is provided opposite to and spaced apart from gate electrode and not having pi-binding, and having nanoparticle provided on first graphene layer.

YOO W J, LI H, LI H M

Graphene switching device comprises first electrode and insulating layer in semiconductor substrate forming energy barrier between graphene layer and electrode, metal particles, second electrode, gate insulating layer and gate electrode.

SEO D, KIM S, PARK S, YUN Y, LEE Y Y, LEE C, DAVID S, KIM S W, PARK S J, YUN Y J, LEE Y H

System, used to prevent corrosion of metals e.g. lithium, comprises a graphene layer formed on a metallic layer, where the metallic layer including a first metal and a second metal that are dipped in a metal solution.

CHAE S J, CHOI J Y, FETHULLAH G, LEE Y H, SHIN H J, YAO F

Semiconductor light emitting device e.g. LED has transparent electrode which is made of graphene layer and contact layer, and active layer which is formed between n-type and p-type nitride semiconductor layers.

SHIM H W, KIM Y S, KIM S T