国家/地区 中国（17）
IPC部 C（13） G（3） H（3）
B（2）
IPC大类 C23（7） C01（5） G01（3）
H01（3） B32（2） C03（2）
IPC小类 C23C（7） C01B（5） G01N（3）
H01L（3） B32B（2）
IPC C23C016/26（4） C01B031/04（3） B32B009/00（2）
C01B032/194（2） C23C016/02（2） C23C016/44（2）
发明人 CHEN Z（7） SUI Y（7） YU G（7）
ZHANG Y（7） GE X（6） HU S（5）
LIANG Y（5） XIE X（5） DENG R（4）
WANG H（4） WANG X（4） DI Z（3）
JIA P（3） JIANG M（3） MA J（3）
公开年 2017（9） 2016（7）
申请年 2016（17）
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（17）

Graphene growth method used for increasing the nucleation density of graphene, involves providing germanium substrate, performing ion implantation on germanium substrate, annealing, providing carbon source and growing.

DI Z, MA J, ZHANG M, WANG G, JIA P, WANG Z, WANG X

Graphene glass has graphene film which is completely sealed between adhered glasses, so that first glass and second glass are not adhered by portion separated by graphene film.

ZHANG Y, YU G, CHEN Z, SUI Y, GE X, DENG R, LIANG Y, HU S

Graphene film surface hydrophilicity improvement involves configuring surfactant solution, and then placing graphene film with substrate in surfactant solution for period of time.

CHEN Z, YU G, ZHANG Y, SUI Y, GE X, HU S, LIANG Y

Growing of graphene with unbonded metal, involves depositing oxide on one surface of metal foil, defining other surface as metal surface, and stacking or rolling up metal foil on oxide surface towards metal surface.

YU G, ZHANG Y, SUI Y, CHEN Z, DENG R, GE X, LIANG Y, HU S

Preparation of graphene glass involves providing glass component and graphene film and then processing, providing glass component and then covering using graphene film, carrying out heat treatment, and completely sealing.

ZHANG Y, YU G, CHEN Z, SUI Y, GE X, DENG R, LIANG Y, HU S

Growth method of transition metal chalcogenide two-dimensional material-graphene heterostructure used in microelectronic device, involves heating substrate, dissolving carbon source on surface of substrate and heating source materials.

YU G, WU T, XIE X, SHI Z, CHEN J, ZHANG Y, SUI Y, CHEN Z

Manufacture of gas sensor for nitrogen oxide, involves placing microheater platform substrate having graphene-covered surface, to chemical vapor deposition reactor, injecting inert gas, hydrogen and sulfur source gas, reacting and cooling.

LI T, GUO L, LIANG C, WANG Y

Non-adhesion graphene preparing metal foil layer stacking method, involves stacking layers of metal foil, separating metal foil, and utilizing chemical vapor deposition in each surface of metal foil stacked structure to prepare graphene.

ZHANG Y, YU G, SUI Y, CHEN Z, DENG R, GE X, LIANG Y, HU S

Non-covalently modified graphene-protein composite film comprises silica substrate, monolayer graphene and protein film.

MAO H, ZHOU L, MA Y, JIN Q, ZHAO J

Preparation of germanium-based graphene nanopore by providing germanium-based graphene, performing ion implantation on germanium-based graphene, generating point defects in graphene and annealing to etch point defects.

DI Z, MA J, ZHANG M, XUE Z, JIA P, WANG Z, WANG G, WANG X